Datasheet NDS9948 (Fairchild) - 4
制造商 | Fairchild |
描述 | Dual 60V P-Channel PowerTrench MOSFET |
页数 / 页 | 6 / 4 — NDS9948. Typical Characteristics. TANCE. NT (A). S E. RMALIZE. N CURRE. , … |
文件格式/大小 | PDF / 382 Kb |
文件语言 | 英语 |
NDS9948. Typical Characteristics. TANCE. NT (A). S E. RMALIZE. N CURRE. , NO. URCE. , DRAI. D-I. DRAIN-. , DRAIN TO SOURCE VOLTAGE (V)
该数据表的模型线
文件文字版本
NDS9948 Typical Characteristics
10 1.8 V = -10V GS -4.5V -6.0V -4.0V 8 1.6 V =-3.5V GS
TANCE
-3.5V
D IS NT (A) S E
6 1.4
-R
-4.0V
N RMALIZE O
-4.5V
N CURRE
4 -3.0V
, NO
1.2
N)
-6.0V
URCE (O , DRAI O DS S
-10V
D-I R
2 1
DRAIN-
0 0.8 0 1 2 3 4 5 6 0 2 4 6 8 10
-V , DRAIN TO SOURCE VOLTAGE (V) DS -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
2 0.5 I = -1A
E
I D D = -2.3A 1.8 0.45 VGS = -10V
HM) D TANC
1.6 0.4
IS (O S RE
1.4 0.35
ANCE N- T
T = 125oC A
RMALIZE O
1.2
IS
0.3
S , NO N)
1
URCE
0.25
N-RE (O O DS S , O R
0.8
N)
0.2
(O DS
TA = 25oC 0.6
R
0.15
DRAIN-
0.4 0.1 -50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10
T -V J, JUNCTION TEMPERATURE (oC) GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with withTemperature. Gate-to-Source Voltage.
6 100 V 25oC DS = -5V T = -55oC
)
V =0V A
A
GS 5 10
A)
125oC
NT ( (
4
NT
1 TA = 125oC 3 0.1 25oC
DRAIN CURRE
2
SE
-55oC 0.01
, DRAIN CURRE D -I EVER
1
, R
0.001
S-I
0 0.0001 1 1.5 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
NDS9948 Rev
B1
(W)