Datasheet NDS9948 (Fairchild) - 5
| 制造商 | Fairchild |
| 描述 | Dual 60V P-Channel PowerTrench MOSFET |
| 页数 / 页 | 6 / 5 — NDS9948. Typical Characteristics. LTAG. pF). URCE O. ACITANCE. CAP. , G. … |
| 文件格式/大小 | PDF / 382 Kb |
| 文件语言 | 英语 |
NDS9948. Typical Characteristics. LTAG. pF). URCE O. ACITANCE. CAP. , G. Qg, GATE CHARGE (nC). -VDS, DRAIN TO SOURCE VOLTAGE (V)
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NDS9948 Typical Characteristics
10 600 f = 1 MHz
)
I
V
D = -2.3A V = -20V -30V V = 0 V
(
DS GS
E
500 8 CISS
LTAG
-40V
pF) O
400
( V
6 300
URCE O
4
-S ACITANCE TE
200
A CAP , G
2 COSS
GS
100
-V
CRSS 0 0 0 2 4 6 8 10 0 10 20 30 40 50 60
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 50
) W
SINGLE PULSE
R (
Rθ = 135°C/W JA
)
40
A
100µ TA = 25°C 10
WE O NT (
1ms R LIMIT DS(ON) 10ms
NT P
30
IE
1 100ms 1s 20 VGS = -10V 10s
, DRAIN CURRE
SINGLE PULSE DC
AK TRANS D
0.1
E -I
Rθ = 135oC/W JA 10
), P
TA = 25oC
(pk P
0.01 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. T
1
N IE
D = 0.5 RθJA(t) = r(t) * RθJA 0.2
TRANS
RθJA = 135oC/W
E V ANCE
0.1 0.1
T CTI IS S
0.05 P(pk)
FFE
0.02
E L RE D A
t1
E
0.01
Z M R
0.01 t2
ALI
TJ - TA = P * RθJA(t)
THE RM
SINGLE PULSE Duty Cycle, D = t1 / t2
NO r(t),
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
NDS9948 Rev
B
1(W)
10 600 f = 1 MHz
)
I
V
D = -2.3A V = -20V -30V V = 0 V
(
DS GS
E
500 8 CISS
LTAG
-40V
pF) O
400
( V
6 300
URCE O
4
-S ACITANCE TE
200
A CAP , G
2 COSS
GS
100
-V
CRSS 0 0 0 2 4 6 8 10 0 10 20 30 40 50 60
Qg, GATE CHARGE (nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 50
) W
SINGLE PULSE
R (
Rθ = 135°C/W JA
)
40
A
100µ TA = 25°C 10
WE O NT (
1ms R LIMIT DS(ON) 10ms
NT P
30
IE
1 100ms 1s 20 VGS = -10V 10s
, DRAIN CURRE
SINGLE PULSE DC
AK TRANS D
0.1
E -I
Rθ = 135oC/W JA 10
), P
TA = 25oC
(pk P
0.01 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. T
1
N IE
D = 0.5 RθJA(t) = r(t) * RθJA 0.2
TRANS
RθJA = 135oC/W
E V ANCE
0.1 0.1
T CTI IS S
0.05 P(pk)
FFE
0.02
E L RE D A
t1
E
0.01
Z M R
0.01 t2
ALI
TJ - TA = P * RθJA(t)
THE RM
SINGLE PULSE Duty Cycle, D = t1 / t2
NO r(t),
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
NDS9948 Rev
B
1(W)