Datasheet SI1470DH (Vishay)
| 制造商 | Vishay |
| 描述 | N-Channel 30 V (D-S) MOSFET |
| 页数 / 页 | 7 / 1 — Si1470DH. N-Channel 30 V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. … |
| 文件格式/大小 | PDF / 126 Kb |
| 文件语言 | 英语 |
Si1470DH. N-Channel 30 V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. Halogen-free According to IEC 61249-2-21. VDS (V). RDS(on) (
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Si1470DH
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Qg (Typ.) Definition
0.066 at VGS = 4.5 V 4.0a • TrenchFET® Power MOSFET 30 4.85 0.095 at VGS = 2.5 V 4.0 • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
APPLICATIONS
• Load Switch D D 1 6 D
Marking Code
D 2 5 D AK XX Y Y Lot Tracea b ility and Date Code G 3 4 S G Part # Code Top V ie w S
Ordering Information:
Si1470DH-T1-E3 (Lead (Pb)-free) Si1470DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 12 TC = 25 °C 5.1 TC = 70 °C 4.0 Continuous Drain Current (TJ = 150 °C)a ID TA = 25 °C 3.8b, c A TA = 70 °C 3.1b, c Pulsed Drain Current IDM 12 Avalanche Current IAS 10 L = 0.1 mH Repetitive Avalanche Energy EAS 5 mJ TC = 25 °C 2.3 Continuous Source-Drain Diode Current IS A TA = 25 °C 1.3b, c TC = 25 °C 2.8 TC = 70 °C 1.8 Maximum Power Dissipationa PD W TA = 25 °C 1.5b, c TA = 70 °C 1.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 60 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. Document Number: 74277 www.vishay.com S10-0646-Rev. B, 22-Mar-10 1
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (
Ω
) ID (A) Qg (Typ.) Definition
0.066 at VGS = 4.5 V 4.0a • TrenchFET® Power MOSFET 30 4.85 0.095 at VGS = 2.5 V 4.0 • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
APPLICATIONS
• Load Switch D D 1 6 D
Marking Code
D 2 5 D AK XX Y Y Lot Tracea b ility and Date Code G 3 4 S G Part # Code Top V ie w S
Ordering Information:
Si1470DH-T1-E3 (Lead (Pb)-free) Si1470DH-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 12 TC = 25 °C 5.1 TC = 70 °C 4.0 Continuous Drain Current (TJ = 150 °C)a ID TA = 25 °C 3.8b, c A TA = 70 °C 3.1b, c Pulsed Drain Current IDM 12 Avalanche Current IAS 10 L = 0.1 mH Repetitive Avalanche Energy EAS 5 mJ TC = 25 °C 2.3 Continuous Source-Drain Diode Current IS A TA = 25 °C 1.3b, c TC = 25 °C 2.8 TC = 70 °C 1.8 Maximum Power Dissipationa PD W TA = 25 °C 1.5b, c TA = 70 °C 1.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 60 80 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. Document Number: 74277 www.vishay.com S10-0646-Rev. B, 22-Mar-10 1