Datasheet TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) (ON Semiconductor) - 6
| 制造商 | ON Semiconductor |
| 描述 | Plastic Medium-Power Complementary Silicon Transistors |
| 页数 / 页 | 8 / 6 — TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP). NPN. PNP. … |
| 文件格式/大小 | PDF / 157 Kb |
| 文件语言 | 英语 |
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP). NPN. PNP. TIP110, 111, 112. TIP115, 116, 117
该数据表的模型线
文件文字版本
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) NPN PNP TIP110, 111, 112 TIP115, 116, 117
6.0 k 6.0 k T V V J = 125°C CE = 3.0 V CE = 3.0 V 4.0 k 4.0 k TJ = 125°C 3.0 k 3.0 k 25°C GAIN GAIN 2.0 k 25°C 2.0 k -55°C -55°C 1.0 k 1.0 k , DC CURRENT 800 , DC CURRENT 800 FE FE h 600 h 600 400 400 300 300 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.4 3.4 TS) TS) T T I J = 25°C J = 25°C C = 3.0 3.0 0.5 A 1.0 A I 2.0 A 4.0 A C = TAGE (VOL TAGE (VOL 2.6 2.6 0.5 A 1.0 A 2.0 A 4.0 A 2.2 2.2 1.8 1.8 OR-EMITTER VOL OR-EMITTER VOL 1.4 1.4 1.0 1.0 , COLLECT , COLLECT CE CE V 0.6 V 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
2.2 2.2 T T J = 25°C J = 25°C 1.8 1.8 TS) TS) VBE(sat) @ IC/IB = 250 1.4 VBE(sat) @ IC/IB = 250 V 1.4 V BE @ VCE = 3.0 V BE @ VCE = 3.0 V TAGE (VOL TAGE (VOL 1.0 1.0 , VOL V , VOL CE(sat) @ IC/IB = 250 V V VCE(sat) @ IC/IB = 250 0.6 0.6 0.2 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages www.onsemi.com 6
6.0 k 6.0 k T V V J = 125°C CE = 3.0 V CE = 3.0 V 4.0 k 4.0 k TJ = 125°C 3.0 k 3.0 k 25°C GAIN GAIN 2.0 k 25°C 2.0 k -55°C -55°C 1.0 k 1.0 k , DC CURRENT 800 , DC CURRENT 800 FE FE h 600 h 600 400 400 300 300 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.4 3.4 TS) TS) T T I J = 25°C J = 25°C C = 3.0 3.0 0.5 A 1.0 A I 2.0 A 4.0 A C = TAGE (VOL TAGE (VOL 2.6 2.6 0.5 A 1.0 A 2.0 A 4.0 A 2.2 2.2 1.8 1.8 OR-EMITTER VOL OR-EMITTER VOL 1.4 1.4 1.0 1.0 , COLLECT , COLLECT CE CE V 0.6 V 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
2.2 2.2 T T J = 25°C J = 25°C 1.8 1.8 TS) TS) VBE(sat) @ IC/IB = 250 1.4 VBE(sat) @ IC/IB = 250 V 1.4 V BE @ VCE = 3.0 V BE @ VCE = 3.0 V TAGE (VOL TAGE (VOL 1.0 1.0 , VOL V , VOL CE(sat) @ IC/IB = 250 V V VCE(sat) @ IC/IB = 250 0.6 0.6 0.2 0.2 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages www.onsemi.com 6