Datasheet BSS123 (ON Semiconductor) - 3

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BSS123 ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise noted. (continued)
Symbol Parameter Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS
(Note 2) td(on) Turn–On Delay Time VDD = 30 V, ID = 0.28 A, − 1.7 3.4 ns VGS = 10 V, RGEN = 6 tr Turn–On Rise Time − 9 18 td(off) Turn–Off Delay Time − 17 31 tf Turn–Off Fall Time − 2.4 5 Qg Total Gate Charge VDS = 30 V, ID = 0.22 A, − 1.8 2.5 nC VGS = 10 V Qgs Gate–Source Charge − 0.2 − Qgd Gate–Drain Charge − 0.3 −
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain–Source Diode Forward Current − − 0.17 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.44 A (Note 2) − 0.8 1.3 V trr Diode Reverse Recovery Time IF = 0.17 A, dif/dt = 100 A/s − 11 − ns Qrr Diode Reverse Recovery Charge − 3 − nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJA is guaranteed by design while RJA is determined by the user’s board design. a) 350°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
TYPICAL CHARACTERISTICS
1.0 1.6 VGS = 10 V 3.5 V 3.0 V 1.5 0.8 6.0 V 4.5 V VGS = 2.5 V 1.4 2.5 V 0.6
−Resistance
1.3 3.0 V 3.5 V 0.4
, Normalized
1.2 4.0 V
, Drain Current (A) DS(on) I D
1.1
R −Source On
0.2 10 V
Drain
1.0 2.0 V 4.5 V 6.0 V 0 0.9 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1
V I DS, Drain To Source Voltage (V) D, Drain Current (A) Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage www.onsemi.com 3