Datasheet BD242, BD242A, BD242B, BD242C (Fairchild)

BD242/ A/B/ BD242/A/B/C C Medium Power Linear and Switching Applications
• Complement to BD241/A/B/C respectively 1 TO-220 1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage : BD242 - 45 V : BD242A - 60 V : BD242B - 80 V : BD242C - 100 V VCER Collector-Emitter Voltage : BD242 - 55 V : BD242A - 70 V : BD242B - 90 V : BD242C - 115 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A ICP *Collector Current (Pulse) - 5 A IB Base Current - 1 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C
Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage : BD242 IC = - 30mA, IB = 0 - 45 V : BD242A - 60 V : BD242B - 80 V : BD242C - 100 V ICEO Collector Cut-off Current : BD242/A VCE = - 30V, IB = 0 - 0.3 mA : BD242B/C VCE = - 60V, IB = 0 - 0.3 mA ICES Collector Cut-off Current : BD242 VCE = - 45V, VBE = 0 - 0.2 mA : BD242A VCE = - 60V, VBE = 0 - 0.2 mA : BD242B VCE = - 80V, VBE = 0 - 0.2 mA : BD242C VCE = - 100V, VBE = 0 - 0.2 mA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 1 mA hFE * DC Current Gain VCE = - 4V, IC = - 1A 25 VCE = - 4V, IC = - 3A 10 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.6A - 1.2 V VBE(on) * Base-Emitter ON Voltage VCE = - 4V, IC = - 3A - 1.8 V * Pulse Test: PW=300µs, duty Cycle≤2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000