Datasheet IRF, MTP (New Jersey Semiconductor) - 3

IRF120-123/IRF520-523
MTP10N08/10N10 Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)
Characteristic Symbol Max Win Unit Test Conditions On Characteristics
VGS(UI) RDS(on) VDS(on) 9ls Gate Threshold Voltage V IRF120-123/IRF520-523 2.0 4.0 MTP10N08/10N10 2.0 4.5 ID = 250 MA, VDS = VQS
ID = 1 mA, VDS = VGS n Static Drain-Source On-Resistance2 VGS -10 V IRF120/121/520/521 0.30 ID = 4.0 A MTP10N08/10N10 0.33 ID = 5.0 A IRF122/123/522/523 0.40 Drain-Source On-Voltage2
MTP 10N08/10N10 Forward Transconductance ID = 4.0 A
VGS =10 V; ID -10.0 A 4.0 V 3.3 V VQS = 10 V, ID = 5.0 A
T 0 = 100-C S (U) VDs = 10 V, ID = 4.0 A VDS = 25 V, VGS = o v
f -1.0 MHz 1.5 Dynamic Characteristics
Mss Input Capacitance 600 PF Coss Output Capacitance 400 pF Crss Reverse Transfer Capacitance 100 pF Switching Characteristics (Tc = 25°C, Figures 1, 2)3
40 ns 70 ns 100 ns td(on) Turn-On Delay Time t, Rise Time td(oH) Turn-Off Delay Time t( Fall Time 70 ns Q8 Total Gate Charge 15 nC Symbol ^ Characteristic Typ Max Unit VDD = 50 V, ID = 4.0 A
V QS = 10 V, RGEN = 50 a
RGS = 50 n VGS -10 v, ID = 10 A
VDD =• 50 V Test Conditions Source-Drain Diode Characteristics VSD tn-Diode Forward Voltage
IRF120/121/520/521 2.5 V ls = 8.0 A; VGS = 0 V IRF122/123/522/523 2.3 V ls -7.0 A; VGS = 0 V ns ls -4.0 A; dls/dt -25 A/MS Reverse Recovery Time 280 Notes
1. Tj -+25'O to +150'C
2. Pulse width limited by Tj
3. Switching time measurements performed on LEM TR-5B test equipment.