Datasheet BZX55 (Vishay) - 4
| 制造商 | Vishay |
| 描述 | Small Signal Zener Diodes |
| 页数 / 页 | 7 / 4 — BZX55-Series. BASIC CHARACTERISTICS |
| 文件格式/大小 | PDF / 104 Kb |
| 文件语言 | 英语 |
BZX55-Series. BASIC CHARACTERISTICS
该数据表的模型线
- BZX55B10-TAP BZX55B10-TR BZX55B11-TAP BZX55B11-TR BZX55B12-TAP BZX55B12-TR BZX55B13-TAP BZX55B13-TR BZX55B15-TAP BZX55B15-TR BZX55B16-TAP BZX55B16-TR BZX55B18-TAP BZX55B18-TR BZX55B20-TAP BZX55B20-TR BZX55B22-TAP BZX55B22-TR BZX55B24-TAP BZX55B24-TR BZX55B27-TAP BZX55B27-TR BZX55B2V4-TAP BZX55B2V4-TR BZX55B2V7-TAP BZX55B2V7-TR BZX55B30-TAP BZX55B30-TR BZX55B33-TAP BZX55B33-TR BZX55B36-TAP BZX55B36-TR BZX55B39-TAP BZX55B39-TR BZX55B3V0-TAP BZX55B3V0-TR BZX55B3V3-TAP BZX55B3V3-TR BZX55B3V6-TAP BZX55B3V6-TR BZX55B3V9-TAP BZX55B3V9-TR BZX55B43-TAP BZX55B43-TR BZX55B47-TAP BZX55B47-TR BZX55B4V3-TAP BZX55B4V3-TR BZX55B4V7-TAP BZX55B4V7-TR BZX55B51-TAP BZX55B51-TR BZX55B56-TAP BZX55B56-TR BZX55B5V1-TAP BZX55B5V1-TR BZX55B5V6-TAP BZX55B5V6-TR BZX55B62-TAP BZX55B62-TR BZX55B68-TAP BZX55B68-TR BZX55B6V2-TAP BZX55B6V2-TR BZX55B6V8-TAP BZX55B6V8-TR BZX55B75-TAP BZX55B75-TR BZX55B7V5-TAP BZX55B7V5-TR BZX55B8V2-TAP BZX55B8V2-TR BZX55B9V1-TAP BZX55B9V1-TR BZX55C10-TAP BZX55C10-TR BZX55C11-TAP BZX55C11-TR BZX55C12-TAP BZX55C12-TR BZX55C13-TAP BZX55C13-TR BZX55C15-TAP BZX55C15-TR BZX55C16-TAP BZX55C16-TR BZX55C18-TAP BZX55C18-TR BZX55C20-TAP BZX55C20-TR BZX55C22-TAP BZX55C22-TR BZX55C24-TAP BZX55C24-TR BZX55C27-TAP BZX55C27-TR BZX55C2V4-TAP BZX55C2V4-TR BZX55C2V7-TAP BZX55C2V7-TR BZX55C30-TAP BZX55C30-TR BZX55C33-TAP BZX55C33-TR BZX55C36-TAP BZX55C36-TR BZX55C39-TAP BZX55C39-TR BZX55C3V0-TAP BZX55C3V0-TR BZX55C3V3-TAP BZX55C3V3-TR BZX55C3V6-TAP BZX55C3V6-TR BZX55C3V9-TAP BZX55C3V9-TR BZX55C43-TAP BZX55C43-TR BZX55C47-TAP BZX55C47-TR BZX55C4V3-TAP BZX55C4V3-TR BZX55C4V7-TAP BZX55C4V7-TR BZX55C51-TAP BZX55C51-TR BZX55C56-TAP BZX55C56-TR BZX55C5V1-TAP BZX55C5V1-TR BZX55C5V6-TAP BZX55C5V6-TR BZX55C62-TAP BZX55C62-TR BZX55C68-TAP BZX55C68-TR BZX55C6V2-TAP BZX55C6V2-TR BZX55C6V8-TAP BZX55C6V8-TR BZX55C75-TAP BZX55C75-TR BZX55C7V5-TAP BZX55C7V5-TR BZX55C8V2-TAP BZX55C8V2-TR BZX55C9V1-TAP BZX55C9V1-TR
文件文字版本
BZX55-Series
www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) W 500 1.3 V = V /V (25 °C) Ztn Zt Z ient (K/ 400 1.2 b TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 300 1.1 4 x 10-4/K nction Am l l u 2 x 10-4/K J 200 1.0 0 - 2 x 10-4/K - 4 x 10-4/K Resist. 100 0.9 - Relative Voltage Change m. T = constant Ztn L V Ther 0 0.8 - - 60 0 60 120 180 240 A 0 5 10 15 20 thJ 95 9599 R T I - Lead Length (mm) 95 9611 j - Junction Temperature (°C) Fig. 1 - Thermal Resistance vs. Lead Length Fig. 4 - Typical Change of Working Voltage vs. Junction Temperature 600 ) 15 W 500 10 400 /K) re Coefficient -4 u 300 5 (10 er Dissipation (m Z w V 200 I = 5 mA Z of 0 - Temperat 100 Z V - Total Po TK tot P 0 - 5 0 40 80 120 160 200 0 10 20 30 40 50 95 9602 T - Ambient Temperature (°C) amb 95 9600 VZ - Z-Voltage (V) Fig. 2 - Total Power Dissipation vs. Ambient Temperature Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage 1000 200 ) V 150 100 V = 2 V R T = 25 °C j 100 I = 5 mA Z 10 oltage Change (m V 50 - Z - Diode Capacitance (pF) V DC 1 0 0 5 10 15 20 25 0 5 10 15 20 25 95 9598 V 95 9601 V Z - Z-Voltage (V) Z - Z-Voltage (V) Fig. 3 - Typical Change of Working Voltage under Operating Fig. 6 - Diode Capacitance vs. Z-Voltage Conditions at Tamb = 25 °C Rev. 1.8, 25-Nov-2021
4
Document Number: 85604 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
BASIC CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) W 500 1.3 V = V /V (25 °C) Ztn Zt Z ient (K/ 400 1.2 b TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 300 1.1 4 x 10-4/K nction Am l l u 2 x 10-4/K J 200 1.0 0 - 2 x 10-4/K - 4 x 10-4/K Resist. 100 0.9 - Relative Voltage Change m. T = constant Ztn L V Ther 0 0.8 - - 60 0 60 120 180 240 A 0 5 10 15 20 thJ 95 9599 R T I - Lead Length (mm) 95 9611 j - Junction Temperature (°C) Fig. 1 - Thermal Resistance vs. Lead Length Fig. 4 - Typical Change of Working Voltage vs. Junction Temperature 600 ) 15 W 500 10 400 /K) re Coefficient -4 u 300 5 (10 er Dissipation (m Z w V 200 I = 5 mA Z of 0 - Temperat 100 Z V - Total Po TK tot P 0 - 5 0 40 80 120 160 200 0 10 20 30 40 50 95 9602 T - Ambient Temperature (°C) amb 95 9600 VZ - Z-Voltage (V) Fig. 2 - Total Power Dissipation vs. Ambient Temperature Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage 1000 200 ) V 150 100 V = 2 V R T = 25 °C j 100 I = 5 mA Z 10 oltage Change (m V 50 - Z - Diode Capacitance (pF) V DC 1 0 0 5 10 15 20 25 0 5 10 15 20 25 95 9598 V 95 9601 V Z - Z-Voltage (V) Z - Z-Voltage (V) Fig. 3 - Typical Change of Working Voltage under Operating Fig. 6 - Diode Capacitance vs. Z-Voltage Conditions at Tamb = 25 °C Rev. 1.8, 25-Nov-2021
4
Document Number: 85604 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000