Datasheet FZT788B (Diodes) - 2
| 制造商 | Diodes |
| 描述 | 15V PNP Medium Power High Gain Transistor In SOT223 |
| 页数 / 页 | 7 / 2 — FZT788B. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
FZT788B. Absolute Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. ESD Ratings. JEDEC Class. www.diodes.com
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FZT788B Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -3 A Peak Pulse Current ICM -8 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Note 5) 3 (Note 6) 2 Power Dissipation PD W (Note 7) 1.6 (Note 8) 1.2 (Note 5) 41.7 (Note 6) 62.5 Thermal Resistance, Junction to Ambient RJA (Note 7) 78.1 °C/W (Note 8) 104 Thermal Resistance Junction to Lead (Note 9) RJL 12.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 8. Same as Note 5, except the device is mounted on minimum recommended pad layout. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT788B 2 of 7 March 2022 Document number: DS33167 Rev. 5 - 2
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© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -3 A Peak Pulse Current ICM -8 A
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Note 5) 3 (Note 6) 2 Power Dissipation PD W (Note 7) 1.6 (Note 8) 1.2 (Note 5) 41.7 (Note 6) 62.5 Thermal Resistance, Junction to Ambient RJA (Note 7) 78.1 °C/W (Note 8) 104 Thermal Resistance Junction to Lead (Note 9) RJL 12.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings
(Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 8. Same as Note 5, except the device is mounted on minimum recommended pad layout. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT788B 2 of 7 March 2022 Document number: DS33167 Rev. 5 - 2
www.diodes.com
© Diodes Incorporated