Datasheet IRFD110 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 9 / 2 — IRFD110. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| 文件格式/大小 | PDF / 154 Kb |
| 文件语言 | 英语 |
IRFD110. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static
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文件文字版本
IRFD110
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 120 °C/W
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 0.60 Ab - - 0.54 Ω Forward Transconductance gfs VDS = 50 V, ID = 0.60 Ab 0.80 - - S
Dynamic
Input Capacitance Ciss - 180 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 81 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 15 - Total Gate Charge Qg - - 8.3 I Gate-Source Charge Qgs V D = 5.6 A, VDS = 80 V, GS = 10 V - - 2.3 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 3.8 Turn-On Delay Time td(on) - 6.9 - Rise Time tr - 16 - VDD = 50 V, ID = 5.6 A, ns Turn-Off Delay Time t R d(off) g = 24 Ω, RD = 8.4 Ω, see fig. 10b - 15 - Fall Time tf - 9.4 - Between lead, D Internal Drain Inductance LD - 4.0 - 6 mm (0.25") from package and center of nH G die contact Internal Source Inductance LS - 6.0 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 1.0 showing the A integral reverse G Pulsed Diode Forward Currenta ISM p - n junction diode - - 8.0 S Body Diode Voltage VSD TJ = 25 °C, IS = 1.0 A, VGS = 0 Vb - - 2.5 V Body Diode Reverse Recovery Time trr - 100 200 ns TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 0.44 0.88 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0885-Rev. D, 30-Aug-2021
2
Document Number: 91127 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 120 °C/W
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 0.60 Ab - - 0.54 Ω Forward Transconductance gfs VDS = 50 V, ID = 0.60 Ab 0.80 - - S
Dynamic
Input Capacitance Ciss - 180 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 81 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 15 - Total Gate Charge Qg - - 8.3 I Gate-Source Charge Qgs V D = 5.6 A, VDS = 80 V, GS = 10 V - - 2.3 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 3.8 Turn-On Delay Time td(on) - 6.9 - Rise Time tr - 16 - VDD = 50 V, ID = 5.6 A, ns Turn-Off Delay Time t R d(off) g = 24 Ω, RD = 8.4 Ω, see fig. 10b - 15 - Fall Time tf - 9.4 - Between lead, D Internal Drain Inductance LD - 4.0 - 6 mm (0.25") from package and center of nH G die contact Internal Source Inductance LS - 6.0 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 1.0 showing the A integral reverse G Pulsed Diode Forward Currenta ISM p - n junction diode - - 8.0 S Body Diode Voltage VSD TJ = 25 °C, IS = 1.0 A, VGS = 0 Vb - - 2.5 V Body Diode Reverse Recovery Time trr - 100 200 ns TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 0.44 0.88 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0885-Rev. D, 30-Aug-2021
2
Document Number: 91127 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000