Preliminary Datasheet EPC2304 (Efficient Power Conversion)
| 制造商 | Efficient Power Conversion |
| 描述 | 200 V, 260 A Enhancement Mode Power Transistor |
| 页数 / 页 | 7 / 1 — eGaN® FET DATASHEET. EPC2304 – Enhancement Mode Power Transistor. … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
eGaN® FET DATASHEET. EPC2304 – Enhancement Mode Power Transistor. EFFICIENT POWER CONVERSION. PRELIMINARY. HAL. EPC. 2304. XYYWW. XXXX
该数据表的模型线
文件文字版本
eGaN® FET DATASHEET
EPC2304
EPC2304 – Enhancement Mode Power Transistor D
VDS , 200 V R
G EFFICIENT POWER CONVERSION
DS(on) , 3.1 mΩ typ
PRELIMINARY S HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
EPC
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
2304 XYYWW
and low on-time are beneficial as well as those where on-state losses dominate.
XXXX Application Notes:
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical,
Questions:
OFF = 0 V (negative voltage not needed)
EPC2304
• Top of FET is electrically connected to source Package size: 3 x 5 mm • Questions:
Ask a GaN Expert Applications Maximum Ratings
• Synchronous Rectification
PARAMETER VALUE UNIT
• AC/DC Chargers, SMPS, Adaptors Drain-to-Source Voltage (Continuous) 200 • High Frequency DC-DC Conversion VDS V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 240 • Class D audio Continuous (TA = 25°C) 102 • Wireless Power ID A Pulsed (25°C, TPULSE = 300 µs) 260 • High Power Lidar & dToF Gate-to-Source Voltage 6 VGS V
Benefits
Gate-to-Source Voltage -4 • Higher Efficiency – Lower conduction and TJ Operating Temperature -40 to 150 °C switching losses, zero reverse recovery losses TSTG Storage Temperature -40 to 150 • Ultra Small Footprint – Higher power density
Thermal Characteristics PARAMETER TYP UNIT
RθJC Thermal Resistance, Junction-to-Case 0.2 RθJB Thermal Resistance, Junction-to-Board 1.5 °C/W RθJA_JEDEC Thermal Resistance, Junction-to-Ambient (using JEDEC 51-2 PCB) 45 RθJA_EVB Thermal Resistance, Junction-to-Ambient (using EPC90140 EVB) 21
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Scan QR code or click link below for more BV information including reliability reports, DSS Drain-to-Source Voltage VGS = 0 V, ID = [TBD] 200 V device models, demo boards! IDSS Drain-Source Leakage VGS = 0 V, VDS = 160 V 0.003 Gate-to-Source Forward Leakage VGS = 5 V 0.011 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.8 Gate-to-Source Reverse Leakage VGS = -4 V 0.005 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 8 mA 0.8 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 32 A 3.1 mΩ VSD Source-Drain Forward Voltage# IS = 0.5 A, VGS = 0 V 1.6 V
https://l.ead.me/EPC2304
# Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 1
EPC2304
EPC2304 – Enhancement Mode Power Transistor D
VDS , 200 V R
G EFFICIENT POWER CONVERSION
DS(on) , 3.1 mΩ typ
PRELIMINARY S HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
EPC
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
2304 XYYWW
and low on-time are beneficial as well as those where on-state losses dominate.
XXXX Application Notes:
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical,
Questions:
OFF = 0 V (negative voltage not needed)
EPC2304
• Top of FET is electrically connected to source Package size: 3 x 5 mm • Questions:
Ask a GaN Expert Applications Maximum Ratings
• Synchronous Rectification
PARAMETER VALUE UNIT
• AC/DC Chargers, SMPS, Adaptors Drain-to-Source Voltage (Continuous) 200 • High Frequency DC-DC Conversion VDS V Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 240 • Class D audio Continuous (TA = 25°C) 102 • Wireless Power ID A Pulsed (25°C, TPULSE = 300 µs) 260 • High Power Lidar & dToF Gate-to-Source Voltage 6 VGS V
Benefits
Gate-to-Source Voltage -4 • Higher Efficiency – Lower conduction and TJ Operating Temperature -40 to 150 °C switching losses, zero reverse recovery losses TSTG Storage Temperature -40 to 150 • Ultra Small Footprint – Higher power density
Thermal Characteristics PARAMETER TYP UNIT
RθJC Thermal Resistance, Junction-to-Case 0.2 RθJB Thermal Resistance, Junction-to-Board 1.5 °C/W RθJA_JEDEC Thermal Resistance, Junction-to-Ambient (using JEDEC 51-2 PCB) 45 RθJA_EVB Thermal Resistance, Junction-to-Ambient (using EPC90140 EVB) 21
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Scan QR code or click link below for more BV information including reliability reports, DSS Drain-to-Source Voltage VGS = 0 V, ID = [TBD] 200 V device models, demo boards! IDSS Drain-Source Leakage VGS = 0 V, VDS = 160 V 0.003 Gate-to-Source Forward Leakage VGS = 5 V 0.011 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.8 Gate-to-Source Reverse Leakage VGS = -4 V 0.005 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 8 mA 0.8 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 32 A 3.1 mΩ VSD Source-Drain Forward Voltage# IS = 0.5 A, VGS = 0 V 1.6 V
https://l.ead.me/EPC2304
# Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 1