Datasheet IRF640, SiHF640 (Vishay)
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 8 / 1 — IRF640, SiHF640. Power MOSFET. FEATURES. PRODUCT SUMMARY. Note. TO-220AB. … |
| 文件格式/大小 | PDF / 167 Kb |
| 文件语言 | 英语 |
IRF640, SiHF640. Power MOSFET. FEATURES. PRODUCT SUMMARY. Note. TO-220AB. DESCRIPTION. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
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文件文字版本
IRF640, SiHF640
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt rating VDS (V) 200 • Repetitive avalanche rated Available RDS(on) () VGS = 10 V 0.18 • Fast switching Qg (Max.) (nC) 70 Available • Ease of paralleling Qgs (nC) 13 • Simple drive requirements Qgd (nC) 39 • Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc?99912 D
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For
TO-220AB
example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and D S G cost-effectiveness. N-Channel MOSFET The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB IRF640PbF Lead (Pb)-free SiHF640-E3 IRF640 SnPb SiHF640
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 TC = 25 °C 18 Continuous Drain Current VGS at 10 V ID TC = 100 °C 11 A Pulsed Drain Current a IDM 72 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energy b EAS 580 mJ Repetitive Avalanche Current a IAR 18 A Repetitive Avalanche Energy a EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dt c dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak temperature) d for 10 s 300 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12). c. ISD 18 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. S15-2667-Rev. C, 16-Nov-15
1
Document Number: 91036 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt rating VDS (V) 200 • Repetitive avalanche rated Available RDS(on) () VGS = 10 V 0.18 • Fast switching Qg (Max.) (nC) 70 Available • Ease of paralleling Qgs (nC) 13 • Simple drive requirements Qgd (nC) 39 • Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc?99912 D
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For
TO-220AB
example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and D S G cost-effectiveness. N-Channel MOSFET The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB IRF640PbF Lead (Pb)-free SiHF640-E3 IRF640 SnPb SiHF640
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 TC = 25 °C 18 Continuous Drain Current VGS at 10 V ID TC = 100 °C 11 A Pulsed Drain Current a IDM 72 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energy b EAS 580 mJ Repetitive Avalanche Current a IAR 18 A Repetitive Avalanche Energy a EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dt c dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Soldering Recommendations (Peak temperature) d for 10 s 300 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12). c. ISD 18 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. S15-2667-Rev. C, 16-Nov-15
1
Document Number: 91036 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000