Datasheet IRF640, SiHF640 (Vishay) - 6
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 8 / 6 — IRF640, SiHF640. Peak Diode Recovery dV/dt Test Circuit. D.U.T. Fig. 14 - … |
| 文件格式/大小 | PDF / 167 Kb |
| 文件语言 | 英语 |
IRF640, SiHF640. Peak Diode Recovery dV/dt Test Circuit. D.U.T. Fig. 14 - For N-Channel
该数据表的模型线
文件文字版本
IRF640, SiHF640
www.vishay.com Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
D.U.T.
• Low stray inductance • Ground plane • Low leakage inductance current transformer - + - + - Rg • dV/dt controlled by R + g • Driver same type as D.U.T. V - DD • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D = P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery Body diode forward current current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91036. S15-2667-Rev. C, 16-Nov-15
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Document Number: 91036 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
D.U.T.
• Low stray inductance • Ground plane • Low leakage inductance current transformer - + - + - Rg • dV/dt controlled by R + g • Driver same type as D.U.T. V - DD • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D = P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery Body diode forward current current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91036. S15-2667-Rev. C, 16-Nov-15
6
Document Number: 91036 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000