Datasheet Si3457CDV (Vishay) - 3
| 制造商 | Vishay |
| 描述 | P-Channel 30 V (D-S) MOSFET |
| 页数 / 页 | 11 / 3 — Si3457CDV. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| 文件格式/大小 | PDF / 328 Kb |
| 文件语言 | 英语 |
Si3457CDV. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
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Si3457CDV
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 20 5 VGS = 10 V thru 5 V 16 4 TC = - 55 °C 12 3 V T GS = 4 V C = 25 °C 8 2 - Drain Current (A) - Drain Current (A) I D I D 4 1 V TC = 125 °C GS = 3 V VGS = 2 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 V V DS - Drain-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.20 800 0.16 ) Ω 600 VGS = 4.5 V C 0.12 iss 400 - On-Resistance ( 0.08 C - Capacitance (pF) DS(on) VGS = 10 V 200 R 0.04 Coss Crss 0.00 0 0 4 8 12 16 20 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
10 1.6 ID = 4.1 A VGS = 10 V, ID = 4.1 V 8 1.4 VDS = 15 V oltage (V) (Normalized) 6 1.2 V V DS = 24 V GS = 4.5 V, ID = 4.1 A 4 1.0 - On-Resistance - Gate-to-Source V GS 2 0.8 V DS(on)R 0 0.6 0 2 4 6 8 10 12 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
SO9-0131-Rev. B, 02-Feb-09
3
Document Number: 68602 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 20 5 VGS = 10 V thru 5 V 16 4 TC = - 55 °C 12 3 V T GS = 4 V C = 25 °C 8 2 - Drain Current (A) - Drain Current (A) I D I D 4 1 V TC = 125 °C GS = 3 V VGS = 2 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 V V DS - Drain-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.20 800 0.16 ) Ω 600 VGS = 4.5 V C 0.12 iss 400 - On-Resistance ( 0.08 C - Capacitance (pF) DS(on) VGS = 10 V 200 R 0.04 Coss Crss 0.00 0 0 4 8 12 16 20 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
10 1.6 ID = 4.1 A VGS = 10 V, ID = 4.1 V 8 1.4 VDS = 15 V oltage (V) (Normalized) 6 1.2 V V DS = 24 V GS = 4.5 V, ID = 4.1 A 4 1.0 - On-Resistance - Gate-to-Source V GS 2 0.8 V DS(on)R 0 0.6 0 2 4 6 8 10 12 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
SO9-0131-Rev. B, 02-Feb-09
3
Document Number: 68602 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000