Datasheet MURS120T3G, SURS8120T3G, NRVUS120VT3G (ON Semiconductor) - 3

MURS120T3G Series, SURS8120T3G Series, NRVUS120VT3G Series MURS105T3G, MURS110T3G, MURS115T3G, MURS120T3G, SURS8105T3G, SURS8110T3G, SURS8115T3G, SURS8120T3G, NRVUS110VT3G, NRVUS120VT3G
10 80 40 T 7.0 20 J = 175°C A) m 8.0 ( 5.0 4.0 2.0 0.8 T 3.0 J = 100°C 0.4 175°C 100°C 0.2 2.0 0.08 0.04 , REVERSE CURRENT 0.02 TJ = 25°C (AMPS) I R TC = 25°C 0.008 1.0 0.004 0.002 0.7 0 20 40 60 80 100 120 140 160 180 200 ARD CURRENT W 0.5 VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
0.3 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections ANEOUS FOR 0.2 can be estimated from these same curves if applied VR is sufficiently ANT below rated VR. , INST 50 F i 0.1 45 0.07 40 NOTE: TYPICAL CAPACITANCE AT 35 0.05 0 V = 45 pF 30 ANCE (pF) 25 0.03 ACIT 20 0.02 15 C, CAP 10 0.01 5.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 v 0 10 20 30 40 50 60 70 80 90 100 F, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
10 5.0 TTS) 9.0 RATED VOLTAGE APPLIED A TJ = 175°C (AMPS) RqJC = 13°C/W 8.0 4.0 TJ = 175°C TION (W 5.0 7.0 A I 10 CURRENT PK + 6.0 3.0 (CAPACITANCELOAD) 20 IAV ARD 5.0 W 4.0 2.0 FOR DC 3.0 DC SQUARE WAVE 2.0 1.0 VERAGE VERAGE POWER DISSIP , A 1.0 , A V) SQUARE WAVE V) I F(A 0 F(A 0 80 90 100 110 120 130 140 150 160 170 180 P 0 0.5 1.0 1.5 2.0 2.5 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Case Figure 5. Power Dissipation www.onsemi.com 3