Datasheet MJE210 (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | PNP Epitaxial Silicon Transistor |
| 页数 / 页 | 6 / 3 |
| 文件格式/大小 | PDF / 164 Kb |
| 文件语言 | 英语 |
该数据表的模型线
文件文字版本
MJE210 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics hFE, DC CURRENT GAIN 1000 V CE = -2V 100 V CE = -1V 10 1
-0.01 -0.1 -1 -10 -10 IC = 10 IB -1 -0.1 -0.01
-0.01 IC[A], COLLECTOR CURRENT V BE(sat) VCE(sat) -0.1 -1 -10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage -1000 -100 IC[A], COLLECTOR CURRENT Cob[pF], CAPACITANCE f=0.1MHZ
IE=0 -100 -10 10 -10 5m
s 1m500µ 0µ s DC
-1 -0.1 -1
-0.1 -1 -10 -100 -1 -10 -100 VCE [V], COLLECTOR-EMITTER VOLTAGE VCB[V], COLLECTOR BASE VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area 24 PC[W], POWER DISSIPATION 21 18 15 12 9 6 3 0
0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
-0.01 -0.1 -1 -10 -10 IC = 10 IB -1 -0.1 -0.01
-0.01 IC[A], COLLECTOR CURRENT V BE(sat) VCE(sat) -0.1 -1 -10 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage -1000 -100 IC[A], COLLECTOR CURRENT Cob[pF], CAPACITANCE f=0.1MHZ
IE=0 -100 -10 10 -10 5m
s 1m500µ 0µ s DC
-1 -0.1 -1
-0.1 -1 -10 -100 -1 -10 -100 VCE [V], COLLECTOR-EMITTER VOLTAGE VCB[V], COLLECTOR BASE VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area 24 PC[W], POWER DISSIPATION 21 18 15 12 9 6 3 0
0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001