Datasheet J110 (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | JFET − General Purpose N−Channel − Depletion |
| 页数 / 页 | 5 / 3 — J110. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. … |
| 文件格式/大小 | PDF / 111 Kb |
| 文件语言 | 英语 |
J110. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. STATIC CHARACTERISTICS. DYNAMIC CHARACTERISTICS
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J110 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit STATIC CHARACTERISTICS
Gate −Source Breakdown Voltage (IG = −1.0 mAdc) V(BR)GSS −25 − Vdc Gate Reverse Current (VGS = −15 Vdc, VDS = 0) IGSS − −3.0 nAdc (VGS = −15 Vdc, VDS = 0, TA = 100°C) − −200 Gate−Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 mAdc) VGS(off) −0.5 −4.0 Vdc Drain Source On−Resistance (VDS v 0.1 V, VGS = 0 V) RDS(on) − 18 W Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc) IDSS 10 − mAdc
DYNAMIC CHARACTERISTICS
Drain−Gate and Source−Gate On−Capacitance Cdg(on) − 85 pF (VDS = VGS = 0, f = 1.0 MHz) + Csg(on) Drain−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Cdg(off) − 15 pF Source−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Csg(off) − 15 pF 1. Pulse Width = 300 ms, Duty Cycle = 3.0%. 100 100 (pF) (pF) 80 80 ANCE ANCE 60 ACIT 60 ACIT VDS = 0 V 5 V 40 40 VDS = 0 V 10 V , INPUT CAP 20 20 iss , FEEDBACK CAP 5 V C rssC 10 V 0 0 0 −4 −8 −12 −16 −20 0 −4 −8 −12 −16 −20 VGS, GATE−SOURCE VOLTAGE (VOLTS) VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance Figure 2. Common Source Reverse Feedback versus Gate−Source Voltage Capacitance versus Gate−Source Voltage
16 100 VGS = 0 V 90 80 −0.25 V 12 70 RDS(on): VDS ≤ 0.1 V 60 RDS(on): VGS = 0 V −0.5 V ANCE (OHMS) 8 50 40 , DRAIN−SOURCE −0.75 V V 30 GS(off): VDS = 5 V DS(on) 4 , DRAIN CURRENT (mA) −1 V R VGS(off): ID = 1.0 mA 20 ON−RESIST I D 10 −1.25 V 0 0 0 −1 −2 −3 −4 −5 −6 −7 −8 0 2 4 6 8 10 12 14 16 18 20 VGS(off), GATE−SOURCE CUTOFF VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus Gate−Source Figure 4. Output Characteristic Cutoff Voltage VGS(off) = −2.0 V http://onsemi.com 2
J110 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit STATIC CHARACTERISTICS
Gate −Source Breakdown Voltage (IG = −1.0 mAdc) V(BR)GSS −25 − Vdc Gate Reverse Current (VGS = −15 Vdc, VDS = 0) IGSS − −3.0 nAdc (VGS = −15 Vdc, VDS = 0, TA = 100°C) − −200 Gate−Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 mAdc) VGS(off) −0.5 −4.0 Vdc Drain Source On−Resistance (VDS v 0.1 V, VGS = 0 V) RDS(on) − 18 W Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc) IDSS 10 − mAdc
DYNAMIC CHARACTERISTICS
Drain−Gate and Source−Gate On−Capacitance Cdg(on) − 85 pF (VDS = VGS = 0, f = 1.0 MHz) + Csg(on) Drain−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Cdg(off) − 15 pF Source−Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Csg(off) − 15 pF 1. Pulse Width = 300 ms, Duty Cycle = 3.0%. 100 100 (pF) (pF) 80 80 ANCE ANCE 60 ACIT 60 ACIT VDS = 0 V 5 V 40 40 VDS = 0 V 10 V , INPUT CAP 20 20 iss , FEEDBACK CAP 5 V C rssC 10 V 0 0 0 −4 −8 −12 −16 −20 0 −4 −8 −12 −16 −20 VGS, GATE−SOURCE VOLTAGE (VOLTS) VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance Figure 2. Common Source Reverse Feedback versus Gate−Source Voltage Capacitance versus Gate−Source Voltage
16 100 VGS = 0 V 90 80 −0.25 V 12 70 RDS(on): VDS ≤ 0.1 V 60 RDS(on): VGS = 0 V −0.5 V ANCE (OHMS) 8 50 40 , DRAIN−SOURCE −0.75 V V 30 GS(off): VDS = 5 V DS(on) 4 , DRAIN CURRENT (mA) −1 V R VGS(off): ID = 1.0 mA 20 ON−RESIST I D 10 −1.25 V 0 0 0 −1 −2 −3 −4 −5 −6 −7 −8 0 2 4 6 8 10 12 14 16 18 20 VGS(off), GATE−SOURCE CUTOFF VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus Gate−Source Figure 4. Output Characteristic Cutoff Voltage VGS(off) = −2.0 V http://onsemi.com 2