Datasheet IRF510 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 8 / 2 — IRF510. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| 文件格式/大小 | PDF / 157 Kb |
| 文件语言 | 英语 |
IRF510. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static. Dynamic
该数据表的模型线
文件文字版本
IRF510
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 3.5
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID =3.4 A b - - 0.54 Ω Forward transconductance gfs VDS = 50 V, ID = 3.4 A b 1.3 - - S
Dynamic
Input capacitance Ciss V - 180 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 81 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 15 - Total gate charge Qg I - - 8.3 D = 5.6 A, VDS = 80 V Gate-source charge Qgs VGS = 10 V VDS = 10 V, - - 2.3 nC see fig. 6 and fig. 13 b Gate-drain charge Qgd - - 3.8 Turn-on delay time td(on) - 6.9 - Rise time tr V - 16 - DD = 50 V, ID = 5.6 A ns R Turn-off delay time t g = 24 Ω, RD = 8.4 Ω, see fig. 10 b d(off) - 15 - Fall time tf - 9.4 - Gate input resistance Rg f = 1 MHz, open drain 2.5 - 11.6 Ω Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G die contact Internal source inductance LS - 7.5 - S
Drain-Source Body Diode Characteristics
D Continuous source-drain diode current I MOSFET symbol S - - 5.6 showing the A integral reverse G Pulsed diode forward current a ISM p - n junction diode - - 20 S Body diode voltage VSD TJ = 25 °C, IS = 5.6 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 100 200 ns TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.44 0.88 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0819-Rev. D, 02-Aug-2021
2
Document Number: 91015 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 3.5
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID =3.4 A b - - 0.54 Ω Forward transconductance gfs VDS = 50 V, ID = 3.4 A b 1.3 - - S
Dynamic
Input capacitance Ciss V - 180 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 81 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 15 - Total gate charge Qg I - - 8.3 D = 5.6 A, VDS = 80 V Gate-source charge Qgs VGS = 10 V VDS = 10 V, - - 2.3 nC see fig. 6 and fig. 13 b Gate-drain charge Qgd - - 3.8 Turn-on delay time td(on) - 6.9 - Rise time tr V - 16 - DD = 50 V, ID = 5.6 A ns R Turn-off delay time t g = 24 Ω, RD = 8.4 Ω, see fig. 10 b d(off) - 15 - Fall time tf - 9.4 - Gate input resistance Rg f = 1 MHz, open drain 2.5 - 11.6 Ω Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G die contact Internal source inductance LS - 7.5 - S
Drain-Source Body Diode Characteristics
D Continuous source-drain diode current I MOSFET symbol S - - 5.6 showing the A integral reverse G Pulsed diode forward current a ISM p - n junction diode - - 20 S Body diode voltage VSD TJ = 25 °C, IS = 5.6 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 100 200 ns TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.44 0.88 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0819-Rev. D, 02-Aug-2021
2
Document Number: 91015 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000