Datasheet IRF510 (Vishay) - 3
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 8 / 3 — IRF510. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output Characteristics, … |
| 文件格式/大小 | PDF / 157 Kb |
| 文件语言 | 英语 |
IRF510. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output Characteristics, TC = 25 °C
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IRF510
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 3.0 VGS I = 5.6 A D Top 15 V V = 10 V 101 10 V GS 2.5 8.0 V 7.0 V 6.0 V 5.5 V 2.0 5.0 V ed) Bottom 4.5 V 1.5 100 maliz ain Current (A) (Nor , Dr 1.0 4.5 V I D ain-to-Source On Resistance , Dr 0.5 20 µs pulse width T = 25 °C C DS(on) 0.0 R 10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 91015_01 VDS, Drain-to-Source Voltage (V) 91015_04 TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature
V 400 GS V 101 GS = 0 V, f = 1 MHz Top 15 V C = C + C , C shorted iss gs gd ds 10 V C = C rss gd 8.0 V 320 C = C + C oss ds gd 7.0 V 6.0 V 5.5 V 240 5.0 V Ciss 100 Bottom 4.5 V 4.5 V ain Current (A) 160 Coss , Dr Capacitance (pF) I D 80 20 µs pulse width Crss T = 175 °C C 0 10-1 100 101 100 101 91015_02 VDS, Drain-to-Source Voltage (V) 91015_05 VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 101 I = 5.6 A 25 °C D V = 80 V DS 16 175 °C V = 50 V DS ltage (V) o V = 20 V V DS 12 100 ain Current (A) 8 , Dr I D 4 , Gate-to-Source 20 µs pulse width GS 10-1 For test circuit V = 50 V V DS see figure 13 0 4 5 6 7 8 9 10 0 2 4 6 8 10 91015_03 VGS, Gate-to-Source Voltage (V) 91015_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0819-Rev. D, 02-Aug-2021
3
Document Number: 91015 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 3.0 VGS I = 5.6 A D Top 15 V V = 10 V 101 10 V GS 2.5 8.0 V 7.0 V 6.0 V 5.5 V 2.0 5.0 V ed) Bottom 4.5 V 1.5 100 maliz ain Current (A) (Nor , Dr 1.0 4.5 V I D ain-to-Source On Resistance , Dr 0.5 20 µs pulse width T = 25 °C C DS(on) 0.0 R 10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180 91015_01 VDS, Drain-to-Source Voltage (V) 91015_04 TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature
V 400 GS V 101 GS = 0 V, f = 1 MHz Top 15 V C = C + C , C shorted iss gs gd ds 10 V C = C rss gd 8.0 V 320 C = C + C oss ds gd 7.0 V 6.0 V 5.5 V 240 5.0 V Ciss 100 Bottom 4.5 V 4.5 V ain Current (A) 160 Coss , Dr Capacitance (pF) I D 80 20 µs pulse width Crss T = 175 °C C 0 10-1 100 101 100 101 91015_02 VDS, Drain-to-Source Voltage (V) 91015_05 VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 101 I = 5.6 A 25 °C D V = 80 V DS 16 175 °C V = 50 V DS ltage (V) o V = 20 V V DS 12 100 ain Current (A) 8 , Dr I D 4 , Gate-to-Source 20 µs pulse width GS 10-1 For test circuit V = 50 V V DS see figure 13 0 4 5 6 7 8 9 10 0 2 4 6 8 10 91015_03 VGS, Gate-to-Source Voltage (V) 91015_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0819-Rev. D, 02-Aug-2021
3
Document Number: 91015 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000