Datasheet BAT49 (STMicroelectronics)
| 制造商 | STMicroelectronics |
| 描述 | Small Signal Schottky Diode |
| 页数 / 页 | 4 / 1 — BAT 49. DESCRIPTION. DO 41. ABSOLUTE RATINGS. Symbol. Parameter. Value. … |
| 文件格式/大小 | PDF / 74 Kb |
| 文件语言 | 英语 |
BAT 49. DESCRIPTION. DO 41. ABSOLUTE RATINGS. Symbol. Parameter. Value. Unit. THERMAL RESISTANCE. Test Conditions
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BAT 49
® SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex-
DO 41
(Glass) cessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 80 V IF Forward Continuous Current* Ta = 70 °C 500 mA IFRM Repetitive Peak Forward Current* tp = 1s 3 A δ ≤ 0.5 IFSM Surge non Repetitive Forward Current* tp ≤ 10ms 10 A Tstg Storage and Junction Temperature Range - 65 to 150 °C Tj - 65 to 125 °C TL Maximum Lead Temperature for Soldering during 10s at 4mm 230 °C from Case
THERMAL RESISTANCE Symbol Test Conditions Value Unit
Rth(j-a) Junction-ambient* 110 °C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
IR * * Tj = 25°C VR = 80V 200 µA VF * * Tj = 25°C IF = 10mA 0.32 V Tj = 25°C IF = 100mA 0.42 Tj = 25°C IF = 1A 1 DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C Tj = 25°C f = 1MHz VR = 0V 120 pF VR = 5V 35 * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%
.
August 1999 Ed : 1A 1/4
® SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex-
DO 41
(Glass) cessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 80 V IF Forward Continuous Current* Ta = 70 °C 500 mA IFRM Repetitive Peak Forward Current* tp = 1s 3 A δ ≤ 0.5 IFSM Surge non Repetitive Forward Current* tp ≤ 10ms 10 A Tstg Storage and Junction Temperature Range - 65 to 150 °C Tj - 65 to 125 °C TL Maximum Lead Temperature for Soldering during 10s at 4mm 230 °C from Case
THERMAL RESISTANCE Symbol Test Conditions Value Unit
Rth(j-a) Junction-ambient* 110 °C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
IR * * Tj = 25°C VR = 80V 200 µA VF * * Tj = 25°C IF = 10mA 0.32 V Tj = 25°C IF = 100mA 0.42 Tj = 25°C IF = 1A 1 DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C Tj = 25°C f = 1MHz VR = 0V 120 pF VR = 5V 35 * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%
.
August 1999 Ed : 1A 1/4