Datasheet BAT85 (NXP) - 3
制造商 | NXP |
描述 | Schottky Barrier Single Diode |
页数 / 页 | 8 / 3 — Nexperia. BAT85. Schottky barrier single diode. 7. Characteristics. Table … |
文件格式/大小 | PDF / 2.1 Mb |
文件语言 | 英语 |
Nexperia. BAT85. Schottky barrier single diode. 7. Characteristics. Table 7. Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max
该数据表的模型线
文件文字版本
Nexperia BAT85 Schottky barrier single diode 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit
VF forward voltage IF = 0.1 mA; Tamb = 25 °C - - 240 mV IF = 1 mA; Tamb = 25 °C - - 320 mV IF = 10 mA; Tamb = 25 °C - - 400 mV IF = 30 mA; Tamb = 25 °C - - 500 mV IF = 100 mA; Tamb = 25 °C - - 800 mV IR reverse current VR = 25 V; Tamb = 25 °C - - 2 µA Cd diode capacitance f = 1 MHz; Tamb = 25 °C; VR = 1 V - - 10 pF trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; - - 4 ns IR(meas) = 1 mA; Tamb = 25 °C 103 mld358 mgc682 105 I I R F (1) (2) (3) (nA) (1) (mA) 104 102 103 (2) 10 102 10 (1) (2) (3) 1 1 (3) 10- 1 10- 1 0 0.4 0.8 1.2 0 10 20 30 VF (V) VR (V) (1) Tamb = 125 °C (1) Tamb = 85 °C (2) Tamb = 85 °C (2) Tamb = 25 °C (3) Tamb = 25 °C (3) Tamb = −40 °C
Fig. 1. Forward current as a function of forward Fig. 2. Reverse current as a function of reverse voltage; typical values voltage; typical values
BAT85 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2012. All rights reserved
Product data sheet 24 July 2012 3 / 8
Document Outline 1. Product profile 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Revision history 11. Legal information