Datasheet LM194, LM394 (National Semiconductor) - 2

Absolute Maximum Ratings If Military/Aerospace specified devices are required, Base-Emitter Current g 10 mA please contact the National Semiconductor Sales Power Dissipation 500 mW Office/Distributors for availability and specifications. Junction Temperature (Note 4) LM194 b55§C to a125§C Collector Current 20 mA LM394/LM394B/LM394C b25§C to a85§C Collector-Emitter Voltage VMAX Storage Temperature Range b65§C to a150§C Collector-Emitter Voltage 35V Soldering Information LM394C 20V Metal Can Package (10 sec.) 260§C Collector-Base Voltage 35V Dual-In-Line Package (10 sec.) 260§C LM394C 20V Small Outline Package Collector-Substrate Voltage 35V Vapor Phase (60 sec.) 215§C LM394C 20V Infrared (15 sec.) 220§C Collector-Collector Voltage 35V See AN-450 ‘‘Surface Mounting and their Effects on Prod- LM394C 20V uct Reliability’’ for other methods of soldering surface mount devices. Electrical Characteristics (TJ e 25§C) LM194 LM394 LM394B/394C Parameter Conditions Units Min Typ Max Min Typ Max Min Typ Max Current Gain (hFE) VCB e 0V to VMAX (Note 1) IC e 1 mA 350 700 300 700 225 500 IC e 100 mA 350 550 250 550 200 400 IC e 10 mA 300 450 200 450 150 300 IC e 1 mA 200 300 150 300 100 200 Current Gain Match, VCB e 0V to VMAX (hFE Match) IC e 10 mA to 1 mA 0.5 2 0.5 4 1.0 5 % 100 [DIB] [hFE(MIN)] IC e 1 mA 1.0 1.0 2.0 % e IC Emitter-Base Offset VCB e 0 25 100 25 150 50 200 mV Voltage IC e 1 mA to 1 mA Change in Emitter-Base (Note 1) Offset Voltage vs IC e 1 mA to 1 mA, 10 25 10 50 10 100 mV Collector-Base Voltage VCB e 0V to VMAX (CMRR) Change in Emitter-Base VCB e 0V, 5 25 5 50 5 50 mV Offset Voltage vs IC e 1 mA to 0.3 mA Collector Current Emitter-Base Offset IC e 10 mA to 1 mA (Note 2) 0.08 0.3 0.08 1.0 0.2 1.5 mV/§C Voltage Temperature IC1 e IC2 Drift VOS Trimmed to 0 at 25§C 0.03 0.1 0.03 0.3 0.03 0.5 mV/§C Logging Conformity IC e 3 nA to 300 mA, 150 150 150 mV VCB e 0, (Note 3) Collector-Base Leakage VCB e VMAX 0.05 0.25 0.05 0.5 0.05 0.5 nA Collector-Collector VCC e VMAX 0.1 2.0 0.1 5.0 0.1 5.0 nA Leakage Input Voltage Noise IC e 100 mA, VCB e 0V, 1.8 1.8 1.8 nV/0Hz f e 100 Hz to 100 kHz Collector to Emitter IC e 1 mA, IB e 10 mA 0.2 0.2 0.2 V Saturation Voltage IC e 1 mA, IB e 100 mA 0.1 0.1 0.1 V Note 1: Collector-base voltage is swept from 0 to VMAX at a collector current of 1 mA, 10 mA, 100 mA, and 1 mA. Note 2: Offset voltage drift with VOS e 0 at TA e 25§C is valid only when the ratio of IC1 to IC2 is adjusted to give the initial zero offset. This ratio must be held to within 0.003% over the entire temperature range. Measurements taken at a25§C and temperature extremes. Note 3: Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation. Note 4: Refer to RETS194X drawing of military LM194H version for specifications. 2