Datasheet IRF840L, SiHF840L (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 10 / 2 — IRF840L, SiHF840L. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. … |
| 文件格式/大小 | PDF / 221 Kb |
| 文件语言 | 英语 |
IRF840L, SiHF840L. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN
该数据表的模型线
文件文字版本
IRF840L, SiHF840L
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62 °C/W Maximum Junction-to-Case (Drain) RthJC - 1.0
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.78 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.8 A b - - 0.85 Ω Forward Transconductance gfs VDS = 50 V, ID = 4.8 A b 4.9 - - S
Dynamic
Input Capacitance Ciss V - 1300 - GS = 0 V, Output Capacitance Coss VDS = 25 V, - 310 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 120 - Total Gate Charge Qg - - 63 I Gate-Source Charge Qgs V D = 8 A, VDS = 400 V GS = 10 V - - 9.3 nC see fig. 6 and 13 b Gate-Drain Charge Qgd - - 32 Turn-On Delay Time td(on) - 14 - Rise Time tr V - 23 - DD = 250 V, ID = 8.0 A ns R Turn-Off Delay Time uo t g = 9.1 Ω, RD = 31 Ω, see fig. 10 b d(off) - 49 - Fall Time tf - 20 - Between lead, D Internal Drain Inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G Internal Source Inductance LS die contact - 7.5 - S Gate Input Resistance Rg f = 1 MHz, open drain 0.6 - 2.8 Ω
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current IS D - - 8.0 showing the integral reverse A G p - n junction diode Pulsed Diode Forward Current a ISM S - - 32 Body Diode Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 V b - - 2.0 V Body Diode Reverse Recovery Time trr - 460 970 ns TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs b Body Diode Reverse Recovery Charge Qrr - 4.2 8.9 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0901-Rev. D, 30-Aug-2021
2
Document Number: 91069 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62 °C/W Maximum Junction-to-Case (Drain) RthJC - 1.0
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.78 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.8 A b - - 0.85 Ω Forward Transconductance gfs VDS = 50 V, ID = 4.8 A b 4.9 - - S
Dynamic
Input Capacitance Ciss V - 1300 - GS = 0 V, Output Capacitance Coss VDS = 25 V, - 310 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 120 - Total Gate Charge Qg - - 63 I Gate-Source Charge Qgs V D = 8 A, VDS = 400 V GS = 10 V - - 9.3 nC see fig. 6 and 13 b Gate-Drain Charge Qgd - - 32 Turn-On Delay Time td(on) - 14 - Rise Time tr V - 23 - DD = 250 V, ID = 8.0 A ns R Turn-Off Delay Time uo t g = 9.1 Ω, RD = 31 Ω, see fig. 10 b d(off) - 49 - Fall Time tf - 20 - Between lead, D Internal Drain Inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G Internal Source Inductance LS die contact - 7.5 - S Gate Input Resistance Rg f = 1 MHz, open drain 0.6 - 2.8 Ω
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current IS D - - 8.0 showing the integral reverse A G p - n junction diode Pulsed Diode Forward Current a ISM S - - 32 Body Diode Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 V b - - 2.0 V Body Diode Reverse Recovery Time trr - 460 970 ns TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs b Body Diode Reverse Recovery Charge Qrr - 4.2 8.9 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0901-Rev. D, 30-Aug-2021
2
Document Number: 91069 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000