Datasheet FMMT717 (Diodes) - 4
| 制造商 | Diodes |
| 描述 | 12V PNP Silicon Low Saturation Transistor In SOT23 |
| 页数 / 页 | 7 / 4 — A Product Line of. Diodes Incorporated. FMMT717. Electrical … |
| 文件格式/大小 | PDF / 421 Kb |
| 文件语言 | 英语 |
A Product Line of. Diodes Incorporated. FMMT717. Electrical Characteristics. Characteristic Symbol. Min. Typ. Max. Unit. Test. Condition
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A Product Line of Diodes Incorporated FMMT717 Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -12 -35 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -12 -25 - V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.5 - V IE = -100µA Collector Cutoff Current ICBO - - -100 nA VCB = -10V Emitter Cutoff Current IEBO - - -100 nA VEB = -5V Collector Emitter Cutoff Current ICES - - -100 nA VCE = -10V 300 475 - IC = -10mA, VCE = -2V 300 450 - IC = -100mA, VCE = -2V Static Forward Current Transfer Ratio (Note 10) hFE 180 275 - - IC = -2.5A, VCE = -2V 60 100 - IC = -8A, VCE = -2V 45 70 - IC = -10A, VCE = -2V - -10 -17 IC = -0.1A, IB = -10mA - -100 -140 I Collector-Emitter Saturation Voltage (Note 10) V C = -1A, IB = -10mA CE(sat) - mV -110 -170 - IC = -1.5A, IB = -50mA - -180 -220 IC = -2.5A, IB = -50mA Base-Emitter Turn-On Voltage (Note 10) VBE(on) - -0.8 -1.0 V IC = -2.5A, VCE = -2V Base-Emitter Saturation Voltage (Note 10) VBE(sat) - -0.9 -1.0 V IC = -2.5A, IB = -50mA Output Capacitance Cobo - 21 30 pF VCB = -10V, f = 1MHz Transition Frequency fT 80 110 - MHz VCE = -10V, IC = -50mA, f = 100MHz Turn-On Time ton - 70 - ns VCC = -6V, IC = -2A Turn-Off Time toff - 130 - IB1 ns = IB2 = 50mA Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% FMMT717 4 of 7 October 2012 Document Number: DS33116 Rev. 5 - 2
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(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -12 -35 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -12 -25 - V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8.5 - V IE = -100µA Collector Cutoff Current ICBO - - -100 nA VCB = -10V Emitter Cutoff Current IEBO - - -100 nA VEB = -5V Collector Emitter Cutoff Current ICES - - -100 nA VCE = -10V 300 475 - IC = -10mA, VCE = -2V 300 450 - IC = -100mA, VCE = -2V Static Forward Current Transfer Ratio (Note 10) hFE 180 275 - - IC = -2.5A, VCE = -2V 60 100 - IC = -8A, VCE = -2V 45 70 - IC = -10A, VCE = -2V - -10 -17 IC = -0.1A, IB = -10mA - -100 -140 I Collector-Emitter Saturation Voltage (Note 10) V C = -1A, IB = -10mA CE(sat) - mV -110 -170 - IC = -1.5A, IB = -50mA - -180 -220 IC = -2.5A, IB = -50mA Base-Emitter Turn-On Voltage (Note 10) VBE(on) - -0.8 -1.0 V IC = -2.5A, VCE = -2V Base-Emitter Saturation Voltage (Note 10) VBE(sat) - -0.9 -1.0 V IC = -2.5A, IB = -50mA Output Capacitance Cobo - 21 30 pF VCB = -10V, f = 1MHz Transition Frequency fT 80 110 - MHz VCE = -10V, IC = -50mA, f = 100MHz Turn-On Time ton - 70 - ns VCC = -6V, IC = -2A Turn-Off Time toff - 130 - IB1 ns = IB2 = 50mA Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% FMMT717 4 of 7 October 2012 Document Number: DS33116 Rev. 5 - 2
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