Datasheet BF240, BF241 (New Jersey Semiconductor) - 2

BF240, BF241
Characteristics at Tamb = 25 °C
Symbol Min. Typ. Max. Value hFE
hFE 67
36 -220
125 -Base Emitter Voltage at VCB = 1 0 V, lc = 1 mA VBE 650 700 740 mV Collector Cutoff Current at VCB = 20 V ICBO -100 nA Thermal Resistance Junction to Ambient RlhA -420" K/W Collector Base Breakdown Voltage at lc = 1 0 /uA V(BH)CBO 40 -V Collector Emitter Breakdown Voltage at lc = 2 mA V(BR)CEO 40 -V Emitter Base Breakdown Voltage at IE = 1 0 ^A V(BH)EBO 4 -V Gain Bandwidth Product
at VCB = 10V, lc = 1 mA, f= 100MHz fj -430
400 -cre -0.27 -PF at VCB = 10V, lc = 1 mA
gs = 5 mS, t = 200 kHz
ys = (6.6 -j 3.3) mS, f = 1 00 MHz F
F -1.5
1.6 3.5 dB
dB Output Admittance
at VCB = 10 V, lc = 1 mA, f = 10.7 MHz
at VCB = 10 V, lc = 1 mA, f = 470 kHz g«
g« -10.5
8.3 DC Current Gain
at VCE -1 0 V, lc = 1 mA Feedback Capacitance
at VCB= 10 V, lc = 1 mA, f = 1 MHz BF240
BF241 BF240
BF241 fr _ MHz
MHz Noise Figure (emitter grounded) 11 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case pS Ms