Datasheet L6565 (STMicroelectronics) - 4

L6565 ELECTRICAL CHARACTERISTCS
(continued) (Tj = -25 to 125°C, VCC = 12V, Co = 1nF; unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
GV Voltage Gain Open loop 60 80 dB GB Gain-Bandwidth Product 1 MHz ICOMP Source Current VCOMP = 4V, VINV = 2.4 V -2 -3.5 -5 mA Sink Current VCOMP = 4V, VINV = 2.6 V 2.5 4.5 mA VCOMP Upper Clamp Voltage ISOURCE = 0.5 mA 5 5.5 V Lower Clamp Voltage ISINK = 0.5 mA 2.25 2.55 V
CURRENT SENSE COMPARATOR
ICS Input Bias Current VCS = 0 -0.05 -1 µA td(H-L) Delay to Output 200 450 ns VCSx Current Sense Reference Clamp VCOMP = Upper clamp, VVFF = 0V 1.28 1.4 1.5 V VCOMP = Upper clamp, VVFF = 1.5V 0.62 0.7 0.78 VCOMP = Upper clamp, VVFF = 3V 0 0.2 VCSdis Hiccup-mode OCP level 1.85 2.0 2.2 V
ZERO CURRENT DETECTOR/ SYNCHRONIZATION
VZCDH Upper Clamp Voltage IZCD = 3mA 4.7 5.2 6.1 V VZCDL Lower Clamp Voltage IZCD = - 3mA 0.3 0.65 1 V VZCDA Arming Voltage (1) 2.1 V (positive-going edge) VZCDT Triggering Voltage 1.6 V (negative-going edge) IZCDb Input Bias Current VZCD = 1 to 4.5 V 2 µA IZCDsrc Source Current Capability -3 -10 mA IZCDsnk Sink Current Capability 3 10 mA VDIS Disable Threshold 150 200 250 mV IZCDr Restart Current After Disable VZCD < VDIS, Vcc > Vccoff -70 -150 -230 µA TBLANK Blanking time after pin 7 high-to- VCOMP ≥ 3.2 V 3.5 µs low transition VCOMP = 2.5 V 18
START TIMER
tSTART Start Timer period 250 400 550 µs
GATE DRIVER
VOL Dropout Voltage IGDsource = 200mA 1.2 2 V IGDsource = 20mA 0.7 1 VOH IGDsink = 200mA 2 V IGDsink = 20mA 0.3 tf Current Fall Time 40 100 ns tr Current Rise Time 40 100 ns IGDoff IGD sink current Vcc = 4 V, VGD = 1 V 5 10 mA (1) Parameters guaranteed by design, not tested in production. 4/17