Datasheet 2SCR586JFRG (Rohm) - 2
制造商 | Rohm |
描述 | NPN 5.0A 80V Power Transistor |
页数 / 页 | 9 / 2 |
文件格式/大小 | PDF / 1.5 Mb |
文件语言 | 英语 |
该数据表的模型线
文件文字版本
2SCR586J FRG Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 6 V IC 5 A ICP*1 10 A PD*2 40 W Tj 150 ℃ Tstg -55 to +150 ℃ Collector current
Power dissipation
Junction temperature
Range of storage temperature
l Electrical characteristics (Ta = 25°C) Min. Values
Typ. Max. IC = 100μA 80 -V BVCEO IC = 1mA 80 -V BVEBO IE = 100μA 6 -V Collector cut-off current ICBO VCB = 80V -1 μA Emitter cut-off current IEBO VEB = 4V -1 μA -100 300 mV 120 -390 -Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown
voltage
Emitter-base breakdown voltage Collector-emitter saturation voltage DC current gain Conditions VCE(sat) IC = 2A, IB = 100mA
hFE*3 VCE = 3V, IC = 500mA Unit Transition frequency f T*3 VCE = 10V, IE = -500mA,
f = 100MHz -200 -MHz Output capacitance Cob VCB = 10V, IE = 0A,
f = 1MHz -50 -pF Turn-On time ton -45 -ns Storage time tstg -700 -ns -180 -ns Fall time tf IC = 2.5A,
IB1 = 250mA,
IB2 = -250mA,
VCC ⋍ 10V,
RL = 3.9Ω
See test circuit *1 Pw=10ms Single Pulse
*2 Tc=25℃
*3 Pulsed
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