Datasheet NDS351AN (ON Semiconductor) - 3

NDS351AN Electrical Characteristics
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA,Referenced to 25°C 26 mV/°C ∆TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA VDS = 24 V, VGS = 0 V, TJ = 55°C 10 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.8 2.1 3 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA,Referenced to 25°C –4 mV/°C ∆TJ Temperature Coefficient RDS(on) Static Drain–Source VGS = 10 V, ID = 1.4 A 92 160 mΩ On–Resistance VGS = 4.5 V, ID = 1.2 A 120 250 VGS = 10 V, ID = 1.4 A, TJ = 125°C 114 214 ID(on) On–State Drain Current VGS = 4.5V, VDS = 5 V 3.5 A gFS Forward Transconductance VDS = 5 V, ID = 1.4 A 4 S
Dynamic Characteristics
Ciss Input Capacitance 145 pF VDS = 15 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 35 pF Crss Reverse Transfer Capacitance 15 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.6 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time V 3 6 ns DD = 15 V, ID = 1 A, t V r Turn–On Rise Time GS = 10 V, RGEN = 6 Ω 8 16 ns td(off) Turn–Off Delay Time 16 29 ns tf Turn–Off Fall Time 2 4 ns Qg Total Gate Charge V 1.3 1.8 nC DS = 15 V, ID = 1.4 A, Q VGS = 4.5 V gs Gate–Source Charge 0.5 nC Qgd Gate–Drain Charge 0.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 0.42 A VSD Drain–Source Diode Forward VGS = 0 V, IS = 0.42 A (Note 2) 0.8 1.2 V Voltage trr Diode Reverse Recovery Time IF = 1.4 A, diF/dt = 100 A/µs 11 nS Qrr Diode Reverse Recovery Charge 4 nC
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 250°C/W when mounted on a b) 270°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. minimum pad. Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2