Datasheet BSS100, BSS123 (Fairchild) - 2
| 制造商 | Fairchild |
| 描述 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 页数 / 页 | 10 / 2 — Electrical Characteristics. Symbol. Parameter. Conditions. Type. Min. … |
| 文件格式/大小 | PDF / 293 Kb |
| 文件语言 | 英语 |
Electrical Characteristics. Symbol. Parameter. Conditions. Type. Min. Typ. Max. Units. OFF CHARACTERISTICS. ON CHARACTERISTICS
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文件文字版本
Electrical Characteristics
(T = 25°C unless otherwise noted) A
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA All 100 V DSS GS D I Zero Gate Voltage Drain Current V = 100 V, V = 0 V BSS100 15 µA DSS DS GS V = 100 V, V = 0 V BSS123 1 µA DS GS V = 100 V, V = 0 V T =125oC All 60 µA DS GS J V = 60 V, V = 0 V BSS100 10 nA DS GS V = 20 V, V = 0 V BSS123 10 nA DS GS I Gate - Body Leakage, Forward V = 20 V, V = 0 V BSS100 10 nA GSSF GS DS V = 20 V, V = 0 V BSS123 50 nA GS DS
ON CHARACTERISTICS
(Note 1) V Gate Threshold Voltage V = V , I = 1 mA All 0.8 1.4 2 V GS(th) DS GS D R Static Drain-Source On-Resistance V = 10 V, I = 0.22 A BSS100 2.8 6 Ω DS(ON) GS D V = 10 V, I = 0.17 A BSS123 2.8 6 GS D V = 4.5 V, I = 0.22 A BSS100 3.2 10 GS D V = 4.5 V, I = 0.17 A BSS123 3.2 10 GS D g Forward Transconductance V = 10 V, I = 0.22 A BSS100 0.08 0.4 S FS DS D V = 10 V, I = 0.17 A BSS123 0.08 0.4 DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = 25 V, V = 0 V, All 29 60 pF iss DS GS f = 1.0 MHz C Output Capacitance All 10 15 pF oss C Reverse Transfer Capacitance All 2 6 pF rss
SWITCHING CHARACTERISTICS
(Note 1) t Turn - On Delay Time V = 30 V, I = 0.28 A, All 8 ns D(on) DD D V = 10 V, R = 50 Ω t Turn - On Rise Time GS GEN All 8 ns r t Turn - Off Delay Time All 13 ns D(off) t Turn - Off Fall Time All 16 ns f Q Totall Gate Charge V = 10 V, I = 0.22 A, All 1.4 2 nC g DS D V = 10 V, GS Q Gate-Source Charge All 0.15 0.25 nC gs Q Gate-Drain Charge All 0.2 0.4 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Source Current BSS100 0.22 A S BSS123 0.17 I Maximum Pulse Source Current (Note 1) BSS100 0.9 A SM BSS123 0.68 V Drain-Source Diode Forward Voltage V = 0 V, I = 0.44 A BSS100 0.9 1.3 V SD GS S V = 0 V, I = 0.34 A BSS123 0.9 1.3 GS S Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. BSS100 Rev. F1 / BSS123 Rev. F1 Document Outline Main Menu Power PSG MOSFET PSG Search fairchildsemi.com
(T = 25°C unless otherwise noted) A
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA All 100 V DSS GS D I Zero Gate Voltage Drain Current V = 100 V, V = 0 V BSS100 15 µA DSS DS GS V = 100 V, V = 0 V BSS123 1 µA DS GS V = 100 V, V = 0 V T =125oC All 60 µA DS GS J V = 60 V, V = 0 V BSS100 10 nA DS GS V = 20 V, V = 0 V BSS123 10 nA DS GS I Gate - Body Leakage, Forward V = 20 V, V = 0 V BSS100 10 nA GSSF GS DS V = 20 V, V = 0 V BSS123 50 nA GS DS
ON CHARACTERISTICS
(Note 1) V Gate Threshold Voltage V = V , I = 1 mA All 0.8 1.4 2 V GS(th) DS GS D R Static Drain-Source On-Resistance V = 10 V, I = 0.22 A BSS100 2.8 6 Ω DS(ON) GS D V = 10 V, I = 0.17 A BSS123 2.8 6 GS D V = 4.5 V, I = 0.22 A BSS100 3.2 10 GS D V = 4.5 V, I = 0.17 A BSS123 3.2 10 GS D g Forward Transconductance V = 10 V, I = 0.22 A BSS100 0.08 0.4 S FS DS D V = 10 V, I = 0.17 A BSS123 0.08 0.4 DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = 25 V, V = 0 V, All 29 60 pF iss DS GS f = 1.0 MHz C Output Capacitance All 10 15 pF oss C Reverse Transfer Capacitance All 2 6 pF rss
SWITCHING CHARACTERISTICS
(Note 1) t Turn - On Delay Time V = 30 V, I = 0.28 A, All 8 ns D(on) DD D V = 10 V, R = 50 Ω t Turn - On Rise Time GS GEN All 8 ns r t Turn - Off Delay Time All 13 ns D(off) t Turn - Off Fall Time All 16 ns f Q Totall Gate Charge V = 10 V, I = 0.22 A, All 1.4 2 nC g DS D V = 10 V, GS Q Gate-Source Charge All 0.15 0.25 nC gs Q Gate-Drain Charge All 0.2 0.4 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Source Current BSS100 0.22 A S BSS123 0.17 I Maximum Pulse Source Current (Note 1) BSS100 0.9 A SM BSS123 0.68 V Drain-Source Diode Forward Voltage V = 0 V, I = 0.44 A BSS100 0.9 1.3 V SD GS S V = 0 V, I = 0.34 A BSS123 0.9 1.3 GS S Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. BSS100 Rev. F1 / BSS123 Rev. F1 Document Outline Main Menu Power PSG MOSFET PSG Search fairchildsemi.com