Typical Electrical Characteristics(continued) 8 0 1 0 5 0 I = 2 2 0 m A D V = 5 V DS C iss 8 2 0 2 0 C 6 oss 1 0 4 5 CAPACITANCE (pF) C f = 1 M H z rss 2 GS V = 0V GS V , GATE-SOURCE VOLTAGE (V) 1 0 0 .1 0 .2 0 .5 1 2 5 1 0 5 0 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4 V , DRAIN TO SOURCE VOLTAGE (V) Q , GATE CHARGE (nC) DS g Figure 7. Capacitance Characteristics.Figure 8. Gate Charge Characteristics. 0 .8 ) V = 5 V DS T = -55°C NS J E M 0.6 2 5 ° C CE (SIE 0 .4 125°C CONDUCTAN 0 .2 ANS , TR FS g 0 0 0 .1 0 .2 0 .3 0 .4 0 .5 0 .6 I , DRAIN CURRENT (A) D Figure 9. Transconductance Variation with DrainCurrent and Temperature. V t t DD o n off t t d (on) t d (off) t r f R VIN L 90% 90% D V OUT VOUT VGS 10% 10% RGEN INVERTED G DUT 90% V 50% 50% IN S 10% PULSE W IDTH Figure 10. Switching Test Circuit.Figure 11. Switching Waveforms . BSS100 Rev. F1 / BSS123 Rev. F1 Document Outline Main Menu Power PSG MOSFET PSG Search fairchildsemi.com