Datasheet IRLR024, IRLU024, SiHLR024, SiHLU024 (Vishay)
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 13 / 1 — IRLR024, IRLU024, SiHLR024, SiHLU024. Power MOSFET. FEATURES. DPAK. IPAK. … |
| 文件格式/大小 | PDF / 477 Kb |
| 文件语言 | 英语 |
IRLR024, IRLU024, SiHLR024, SiHLU024. Power MOSFET. FEATURES. DPAK. IPAK. (TO-252). (TO-251). PRODUCT SUMMARY. DESCRIPTION
该数据表的模型线
文件文字版本
IRLR024, IRLU024, SiHLR024, SiHLU024
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
DPAK IPAK
• Surface-mount (IRLR024, SiHLR024)
(TO-252) (TO-251)
D • Straight lead (IRLU024, SiHLU024) D G • Available in tape and reel • Logic-level gate drive Available S • R G DS(on) specified at VGS = 4 V and 5 V D S G S • Fast switching N-Channel MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY DESCRIPTION
VDS (V) 60 Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, RDS(on) (Ω) VGS = 5.0 V 0.10 ruggedized device design, low on-resistance and Qg (Max.) (nC) 18 cost-effectiveness. Qgs (nC) 4.5 The DPAK is designed for surface mounting using vapor Qgd (nC) 12 phase, infrared, or wave soldering techniques. The straight Configuration Single lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) - SiHLR024TRL-GE3 SiHLR024TR-GE3 SiHLU024-GE3 Lead (Pb)-free and halogen-free IRLR024PbF-BE3 - IRLR024TRPbF-BE3 Lead (Pb)-free IRLR024PbF IRLR024TRLPbF IRLR024TRPbF a IRLU024PbF
Note
a. See device orientation
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 10 TC = 25 °C 14 Continuous drain current VGS at 5 V ID TC = 100 °C 9.2 A Pulsed drain current a IDM 56 Linear derating factor 0.33 W/°C Single pulse avalanche energy b 0.020 Drain-source voltage EAS 53 mJ Maximum power dissipation TC = 25 °C 42 PD W Maximum power dissipation (PCB mount) e TA = 25 °C 2.5 Peak diode recovery dV/dt c dV/dt 4.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d For 10 s 260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 Ω, IAS = 14 A (see fig. 12) c. ISD ≤ 17 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case e. When mounted on 1" square PCB (FR-4 or G-10 material) S21-0818-Rev. F, 02-Aug-2021
1
Document Number: 91322 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
DPAK IPAK
• Surface-mount (IRLR024, SiHLR024)
(TO-252) (TO-251)
D • Straight lead (IRLU024, SiHLU024) D G • Available in tape and reel • Logic-level gate drive Available S • R G DS(on) specified at VGS = 4 V and 5 V D S G S • Fast switching N-Channel MOSFET • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY DESCRIPTION
VDS (V) 60 Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, RDS(on) (Ω) VGS = 5.0 V 0.10 ruggedized device design, low on-resistance and Qg (Max.) (nC) 18 cost-effectiveness. Qgs (nC) 4.5 The DPAK is designed for surface mounting using vapor Qgd (nC) 12 phase, infrared, or wave soldering techniques. The straight Configuration Single lead version (IRLU, SiHLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) - SiHLR024TRL-GE3 SiHLR024TR-GE3 SiHLU024-GE3 Lead (Pb)-free and halogen-free IRLR024PbF-BE3 - IRLR024TRPbF-BE3 Lead (Pb)-free IRLR024PbF IRLR024TRLPbF IRLR024TRPbF a IRLU024PbF
Note
a. See device orientation
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60 V Gate-source voltage VGS ± 10 TC = 25 °C 14 Continuous drain current VGS at 5 V ID TC = 100 °C 9.2 A Pulsed drain current a IDM 56 Linear derating factor 0.33 W/°C Single pulse avalanche energy b 0.020 Drain-source voltage EAS 53 mJ Maximum power dissipation TC = 25 °C 42 PD W Maximum power dissipation (PCB mount) e TA = 25 °C 2.5 Peak diode recovery dV/dt c dV/dt 4.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d For 10 s 260
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 Ω, IAS = 14 A (see fig. 12) c. ISD ≤ 17 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case e. When mounted on 1" square PCB (FR-4 or G-10 material) S21-0818-Rev. F, 02-Aug-2021
1
Document Number: 91322 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000