Datasheet NDS331N (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 页数 / 页 | 9 / 4 — NDS331N. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region … |
| 文件格式/大小 | PDF / 282 Kb |
| 文件语言 | 英语 |
NDS331N. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. On−Resistance Variation with
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NDS331N TYPICAL ELECTRICAL CHARACTERISTICS
4 1.75 VGS = 4.5 V 3.0 2.0 2.7 1.5 3 2.5 VGS = 2.0 V −Resistance 1.25 2 2.5 , Normalized −Source Current (A) 1 1.5 DS(on) 1 R −Source On , Drain I D 0.75 Drain 4.5 2.7 3.0 3.5 0 0.5 0 1 2 3 0 0.5 1 1.5 2 2.5 3 VDS, Drain−Source Voltage (V) ID, Drain Current (A)
Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage
1.8 1.75 ID = 1.3 A VGS = 2.7 V T 1.6 VGS = 2.7 V J = 125°C 1.5 1.4 −Resistance 1.25 −Resistance 1.2 , Normalized , Normalized 25°C 1 1 DS(on) DS(on) R −Source On R −Source On −55°C 0.75 Drain 0.8 Drain 0.6 0.5 −50 −25 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 TJ, Junction Temperature (°C) ID, Drain Current (A)
Figure 3. On−Resistance Variation with Figure 4. On−Resistance Variation with Temperature Drain Current and Temperature
4 1.3 V T DS = 5.0 V J = −55°C 25°C V 1.2 DS = VGS I 125°C D = 250 A 3 1.1 −Source oltage 1 2 0.9 0.8 , Drain Current (A) Threshold V I D 1 , Normalized Gate 0.7 V th 0.6 0 0.5 0 0.5 1 1.5 2 2.5 3 −50 −25 0 25 50 75 100 125 150 VGS, Gate To Source Voltage (V) TJ, Junction Temperature (°C)
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature www.onsemi.com 4
4 1.75 VGS = 4.5 V 3.0 2.0 2.7 1.5 3 2.5 VGS = 2.0 V −Resistance 1.25 2 2.5 , Normalized −Source Current (A) 1 1.5 DS(on) 1 R −Source On , Drain I D 0.75 Drain 4.5 2.7 3.0 3.5 0 0.5 0 1 2 3 0 0.5 1 1.5 2 2.5 3 VDS, Drain−Source Voltage (V) ID, Drain Current (A)
Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage
1.8 1.75 ID = 1.3 A VGS = 2.7 V T 1.6 VGS = 2.7 V J = 125°C 1.5 1.4 −Resistance 1.25 −Resistance 1.2 , Normalized , Normalized 25°C 1 1 DS(on) DS(on) R −Source On R −Source On −55°C 0.75 Drain 0.8 Drain 0.6 0.5 −50 −25 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 TJ, Junction Temperature (°C) ID, Drain Current (A)
Figure 3. On−Resistance Variation with Figure 4. On−Resistance Variation with Temperature Drain Current and Temperature
4 1.3 V T DS = 5.0 V J = −55°C 25°C V 1.2 DS = VGS I 125°C D = 250 A 3 1.1 −Source oltage 1 2 0.9 0.8 , Drain Current (A) Threshold V I D 1 , Normalized Gate 0.7 V th 0.6 0 0.5 0 0.5 1 1.5 2 2.5 3 −50 −25 0 25 50 75 100 125 150 VGS, Gate To Source Voltage (V) TJ, Junction Temperature (°C)
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature www.onsemi.com 4