Datasheet TN0200K (Vishay) - 3
| 制造商 | Vishay |
| 描述 | N-Channel 20-V (D-S) MOSFETs |
| 页数 / 页 | 5 / 3 — New Product. TN0200K. TYPICAL CHARACTERISTICS. On-Resistance vs. Drain … |
| 文件格式/大小 | PDF / 77 Kb |
| 文件语言 | 英语 |
New Product. TN0200K. TYPICAL CHARACTERISTICS. On-Resistance vs. Drain Current. Capacitance. Gate Charge
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New Product TN0200K
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 1.0 200 175 ) Ω 0.8 150 125 0.6 Ciss 100 – On-Resistance ( 0.4 VGS = 2.5 V 75 C – Capacitance (pF) VGS = 4.5 V 50 Coss r DS(on) 0.2 Crss 25 0.0 0 0 1 2 3 4 5 6 7 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
5 1.7 VDS = 10 V ID = 0.6 A 4 1.5 oltage (V) VGS = 4.5 V ID = 0.6 A 3 ed) 1.3 maliz 2 – On-Resiistance (Nor 1.1 – Gate-to-Source V r DS(on) GS V 1 0.9 0 0.7 0.0 0.3 0.6 0.9 1.2 1.5 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
5 0.8 T 0.7 J = 150 °C 1 ) Ω 0.6 0.5 ID = 0.6 A 0.1 0.4 – On-Resistance ( 0.3 – Source Current (A) TJ = 25 °C SI 0.01 0.2 r DS(on) 0.1 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage
Document Number: 72678 www.vishay.com S-71198–Rev. B, 18-Jun-07 3 Document Outline Datasheet Disclaimer
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 1.0 200 175 ) Ω 0.8 150 125 0.6 Ciss 100 – On-Resistance ( 0.4 VGS = 2.5 V 75 C – Capacitance (pF) VGS = 4.5 V 50 Coss r DS(on) 0.2 Crss 25 0.0 0 0 1 2 3 4 5 6 7 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
5 1.7 VDS = 10 V ID = 0.6 A 4 1.5 oltage (V) VGS = 4.5 V ID = 0.6 A 3 ed) 1.3 maliz 2 – On-Resiistance (Nor 1.1 – Gate-to-Source V r DS(on) GS V 1 0.9 0 0.7 0.0 0.3 0.6 0.9 1.2 1.5 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
5 0.8 T 0.7 J = 150 °C 1 ) Ω 0.6 0.5 ID = 0.6 A 0.1 0.4 – On-Resistance ( 0.3 – Source Current (A) TJ = 25 °C SI 0.01 0.2 r DS(on) 0.1 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage
Document Number: 72678 www.vishay.com S-71198–Rev. B, 18-Jun-07 3 Document Outline Datasheet Disclaimer