Datasheet IRFP240 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 10 / 2 — IRFP240. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
IRFP240. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static
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文件文字版本
IRFP240
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 200 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 12 A b - - 0.18 Ω Forward transconductance gfs VDS = 50 V, ID = 12 A b 6.9 - - S
Dynamic
Input capacitance Ciss V - 1300 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 400 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 130 - Total gate charge Qg - - 70 I Gate-source charge Qgs V D = 18 A, VDS = 160 V, GS = 10 V - - 13 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 39 Turn-on delay time td(on) - 14 - VDD = 100 V, ID = 18 A, Rise time tr - 51 - Rg = 9.1 Ω, RD = 5.4 Ω, ns Turn-off delay time td(off) see fig. 10 b - 45 - Fall time tf - 36 - Internal drain inductance L D D Between lead, - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance L G S - 13 - die contact S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol - - 20 D showing the integral reverse A Pulsed diode forward current a I G SM - - 80 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 V b - - 2.0 V Body diode reverse recovery time trr - 300 610 ns TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 3.4 7.1 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S22-0046, Rev. C, 24-Jan-2021
2
Document Number: 91210 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 200 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 200 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 12 A b - - 0.18 Ω Forward transconductance gfs VDS = 50 V, ID = 12 A b 6.9 - - S
Dynamic
Input capacitance Ciss V - 1300 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 400 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 130 - Total gate charge Qg - - 70 I Gate-source charge Qgs V D = 18 A, VDS = 160 V, GS = 10 V - - 13 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 39 Turn-on delay time td(on) - 14 - VDD = 100 V, ID = 18 A, Rise time tr - 51 - Rg = 9.1 Ω, RD = 5.4 Ω, ns Turn-off delay time td(off) see fig. 10 b - 45 - Fall time tf - 36 - Internal drain inductance L D D Between lead, - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance L G S - 13 - die contact S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol - - 20 D showing the integral reverse A Pulsed diode forward current a I G SM - - 80 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 V b - - 2.0 V Body diode reverse recovery time trr - 300 610 ns TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 3.4 7.1 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S22-0046, Rev. C, 24-Jan-2021
2
Document Number: 91210 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000