Datasheet IRFP240 (Vishay) - 5
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 10 / 5 — IRFP240. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b - … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
IRFP240. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b - Unclamped Inductive Waveforms
该数据表的模型线
文件文字版本
IRFP240
www.vishay.com Vishay Siliconix L V V DS DS Vary tp to obtain t required I p AS VDD R D.U.T G + V - DD V I DS AS 10 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S22-0046, Rev. C, 24-Jan-2021
5
Document Number: 91210 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix L V V DS DS Vary tp to obtain t required I p AS VDD R D.U.T G + V - DD V I DS AS 10 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S22-0046, Rev. C, 24-Jan-2021
5
Document Number: 91210 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000