Datasheet NOA1212 (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | Ambient Light Sensor with Dark Current Compensation |
| 页数 / 页 | 9 / 3 — NOA1212. Table 3. ELECTRICAL CHARACTERISTICS. Rating. Test Conditions. … |
| 文件格式/大小 | PDF / 171 Kb |
| 文件语言 | 英语 |
NOA1212. Table 3. ELECTRICAL CHARACTERISTICS. Rating. Test Conditions. Symbol. Min. Typ. Max. Unit. www.onsemi.com
该数据表的模型线
文件文字版本
NOA1212 Table 3. ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C < TA < 85°C)
Rating Test Conditions Symbol Min Typ Max Unit
Power supply voltage VDD 2 3.0 5.5 V Power supply current VDD = 3.0 V, Ev = 0 lux, H−Gain IDD_0 6 8 12 mA Power supply current VDD = 3.0 V, Ev = 100 lux, H−Gain IDD_100 32 64 96 mA Power down current All light levels IDD_PD 0.2 5 nA Output current, high−gain Ev = 100 lux, White LED Io_high 41 51 61.5 mA Dark output current, high−gain VDD = 3.0 V, Ev = 0 lux Io_dark 10 nA Wavelength of maximum lm 540 nm response White LED/fluorescent current Ev = 100 lux rLE 1.0 ratio Incandescent/fluorescent Ev = 100 lux rIF 1.45 current ratio Maximum output voltage Ev = 100 lux, RL = 220 kW, H−Gain VOMAX VDD–0.4 VDD–0.1 VDD V Power down time Ev = 100 lux, H−Gain to PD tPD 1.5 ms Wake up time Ev = 100 lux, PD to H−Gain twu 300 ms Low level input voltage VIL −0.2 0.25 VDD V High level input voltage VIH 0.75 VDD VDD+0.2 V Operating free−air temperature TA −40 85 °C range Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com 3
(Unless otherwise specified, these specifications apply over VDD = 5.5 V, −40°C < TA < 85°C)
Rating Test Conditions Symbol Min Typ Max Unit
Power supply voltage VDD 2 3.0 5.5 V Power supply current VDD = 3.0 V, Ev = 0 lux, H−Gain IDD_0 6 8 12 mA Power supply current VDD = 3.0 V, Ev = 100 lux, H−Gain IDD_100 32 64 96 mA Power down current All light levels IDD_PD 0.2 5 nA Output current, high−gain Ev = 100 lux, White LED Io_high 41 51 61.5 mA Dark output current, high−gain VDD = 3.0 V, Ev = 0 lux Io_dark 10 nA Wavelength of maximum lm 540 nm response White LED/fluorescent current Ev = 100 lux rLE 1.0 ratio Incandescent/fluorescent Ev = 100 lux rIF 1.45 current ratio Maximum output voltage Ev = 100 lux, RL = 220 kW, H−Gain VOMAX VDD–0.4 VDD–0.1 VDD V Power down time Ev = 100 lux, H−Gain to PD tPD 1.5 ms Wake up time Ev = 100 lux, PD to H−Gain twu 300 ms Low level input voltage VIL −0.2 0.25 VDD V High level input voltage VIH 0.75 VDD VDD+0.2 V Operating free−air temperature TA −40 85 °C range Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com 3