Datasheet LME49710 (National Semiconductor) - 8

制造商National Semiconductor
描述High Performance, High Fidelity Audio Operational Amplifier
页数 / 页28 / 8 — THD+N vs Frequency. = 15V, V. = –15V,. = 17V, V. = –17V,. R = 2k. , V. = …
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THD+N vs Frequency. = 15V, V. = –15V,. = 17V, V. = –17V,. R = 2k. , V. = 3V. OUT. RMS. LME49710. R = 10k

THD+N vs Frequency = 15V, V = –15V, = 17V, V = –17V, R = 2k , V = 3V OUT RMS LME49710 R = 10k

该数据表的模型线

文件文字版本

THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R = 2k

, V = 3V R = 2k

, V = 3V L OUT RMS L OUT RMS LME49710
20210464 20210467
THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R
= 600Ω
, V = 3V R
= 600Ω
, V = 3V L OUT RMS L OUT RMS
20210466 20210469
THD+N vs Frequency THD+N vs Frequency V = 15V, V = –15V, V = 17V, V = –17V, CC EE CC EE R = 10k

, V = 3V R = 10k

, V = 3V L OUT RMS L OUT RMS
20210465 20210468 www.national.com 8 Document Outline LME49710 General Description Key Specifications Features Applications Typical Application FIGURE 1. Passively Equalized RIAA Phono Preamplifier Connection Diagrams Absolute Maximum Ratings Electrical Characteristics Typical Performance Characteristics Application Hints Noise Measurement Circuit Typical Applications Application Information DISTORTION MEASUREMENTS FIGURE 2. THD+N and IMD Distortion Test Circuit Revision History Physical Dimensions