Datasheet TCTH011AE, TCTH012AE, TCTH021AE, TCTH022AE, TCTH011BE, TCTH012BE, TCTH021BE, TCTH022BE (Toshiba) - 6
| 制造商 | Toshiba |
| 描述 | CMOS Linear Integrated Circuit Silicon Monolithic |
| 页数 / 页 | 14 / 6 — TCTH0xxxE Series. Electrical characteristics. tope, tDET1, tDET2 Waveforms |
| 文件格式/大小 | PDF / 909 Kb |
| 文件语言 | 英语 |
TCTH0xxxE Series. Electrical characteristics. tope, tDET1, tDET2 Waveforms
该数据表的模型线
文件文字版本
TCTH0xxxE Series Electrical characteristics
(Unless otherwise specified, VDD = 3.3 V)
Tj = -40 to 125 °C Tj = 25 °C (Note 5) Characteristics symbol Test Condition Unit Min. Typ. Max. Min. Max. TCTH01xxE, VDD = 3.3 V 0.92 1.00 1.08 0.76 1.27 μA TCTH01xxE, VDD = 1.7 V to 5.5V 0.80 1.00 1.22 0.72 1.32 μA PTCO output current IPTCO TCTH02xxE, VDD = 3.3 V 9.2 10.0 10.8 7.6 12.7 μA TCTH02xxE, VDD = 1.7 V to 5.5 V 8.0 10.0 12.2 7.2 13.2 μA Detect Voltage VDET 0.42 0.50 0.58 0.36 0.64 V Hysteresis Voltage VDETHYS TCTH0x1xE ― 0.1 ― ― ― V PTCO terminal voltage tDET1 ― 17 ― ― ― μs ：1 V to 10 mV Response time PTCO terminal voltage tDET2 ― 214 ― ― ― μs ：1 V to 10 mV, TCTH0x1xE IDD1U TCTH01xxE ― 1.8 2.4 ― 2.6 μA Current Consumption IDD10U TCTH02xxE ― 11.3 14.7 ― 16.5 μA UVLO voltage VUVLO ― 1.5 ― ― ― V Operation MASK time tope ― 20 ― ― ― μs Threshold of VIHRESET 0.84 ― VDD 1.00 VDD V RESET pin High level Pull-down current at RESET pin IRESET ― 0.04 ― ― ― μA PTCGOOD VOH TCTH0xxAE, IPTCGOOD = -4 mA 3.03 ― ― ― ― V High level output voltage PTCGOOD VOL IPTCGOOD = 4 mA ― ― 0.2 ― ― V Low level output voltage
Note 5: These parameters are guaranteed by design.
V VDET UVLO VDETHYS VDD VPTCO etini PTCGOOD f e PTCGOOD d nI tope tDET1 tDET2
tope, tDET1, tDET2 Waveforms
© 2023 6 2023-04-25 Toshiba Electronic Devices & Storage Corporation Rev. 2.0
(Unless otherwise specified, VDD = 3.3 V)
Tj = -40 to 125 °C Tj = 25 °C (Note 5) Characteristics symbol Test Condition Unit Min. Typ. Max. Min. Max. TCTH01xxE, VDD = 3.3 V 0.92 1.00 1.08 0.76 1.27 μA TCTH01xxE, VDD = 1.7 V to 5.5V 0.80 1.00 1.22 0.72 1.32 μA PTCO output current IPTCO TCTH02xxE, VDD = 3.3 V 9.2 10.0 10.8 7.6 12.7 μA TCTH02xxE, VDD = 1.7 V to 5.5 V 8.0 10.0 12.2 7.2 13.2 μA Detect Voltage VDET 0.42 0.50 0.58 0.36 0.64 V Hysteresis Voltage VDETHYS TCTH0x1xE ― 0.1 ― ― ― V PTCO terminal voltage tDET1 ― 17 ― ― ― μs ：1 V to 10 mV Response time PTCO terminal voltage tDET2 ― 214 ― ― ― μs ：1 V to 10 mV, TCTH0x1xE IDD1U TCTH01xxE ― 1.8 2.4 ― 2.6 μA Current Consumption IDD10U TCTH02xxE ― 11.3 14.7 ― 16.5 μA UVLO voltage VUVLO ― 1.5 ― ― ― V Operation MASK time tope ― 20 ― ― ― μs Threshold of VIHRESET 0.84 ― VDD 1.00 VDD V RESET pin High level Pull-down current at RESET pin IRESET ― 0.04 ― ― ― μA PTCGOOD VOH TCTH0xxAE, IPTCGOOD = -4 mA 3.03 ― ― ― ― V High level output voltage PTCGOOD VOL IPTCGOOD = 4 mA ― ― 0.2 ― ― V Low level output voltage
Note 5: These parameters are guaranteed by design.
V VDET UVLO VDETHYS VDD VPTCO etini PTCGOOD f e PTCGOOD d nI tope tDET1 tDET2
tope, tDET1, tDET2 Waveforms
© 2023 6 2023-04-25 Toshiba Electronic Devices & Storage Corporation Rev. 2.0