Datasheet TLP3475W (Toshiba) - 2

TLP3475W 5. Internal Circuit 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Note Rating Unit LED Input forward current IF 30 mA Input forward current derating (Ta ≥ 25 �) ∆IF/∆Ta -0.3 mA/� Input reverse voltage VR 6 V Input power dissipation PD 50 mW Input power dissipation derating (Ta ≥ 25 �) ∆PD/∆Ta -0.5 mW/� Junction temperature Tj 125 � Detector OFF-state output terminal voltage VOFF 60 V ON-state current ION 0.4 A ON-state current derating (Ta ≥ 25 �) ∆ION/∆Ta -4 mA/� ON-state current (pulsed) (t = 100 ms, Duty = 1/10) IONP 1.2 A Output power dissipation PO 240 mW Output power dissipation derating (Ta ≥ 25 �) ∆PO/∆Ta -2.4 mW/� Junction temperature Tj 125 � Common Storage temperature Tstg -40 to 125 Operating temperature Topr -40 to 110 Lead soldering temperature (10 s) Tsol 260 Isolation voltage AC, 60 s, R.H. ≤ 60 % BVS (Note 1) 300 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. Note: This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on. 7. Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Supply voltage VDD � � 48 V Input forward current IF 5 7.5 20 mA ON-state current ION � � 0.4 A Operating temperature Topr -20 � 100 � Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. ©2022-2023 2 2023-08-24 Toshiba Electronic Devices & Storage Corporation Rev.1.0