Datasheet MC10EP16, MC100EP16 (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | 3.3 V/5 V ECL Differential Receiver/Driver |
| 页数 / 页 | 13 / 3 — MC10EP16, MC100EP16. Table 3. MAXIMUM RATINGS. Symbol. Parameter. … |
| 文件格式/大小 | PDF / 357 Kb |
| 文件语言 | 英语 |
MC10EP16, MC100EP16. Table 3. MAXIMUM RATINGS. Symbol. Parameter. Condition 1. Condition 2. Rating. Unit
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MC10EP16, MC100EP16 Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit
VCC PECL Mode Power Supply VEE = 0 V 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage VEE = 0 V VI ≤ VCC 6 V NECL Mode Input Voltage VCC = 0 V VI ≥ VEE −6 Iout Output Current Continuous 50 mA Surge 100 IBB VBB Sink/Source ±0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm SOIC−8 NB 190 °C/W 500 lfpm SOIC−8 NB 130 qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm TSSOP−8 185 °C/W 500 lfpm TSSOP−8 140 qJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm DFN8 129 °C/W 500 lfpm DFN8 84 qJC Thermal Resistance (Junction-to-Case) (Note 2) DFN8 35 to 40 °C/W Tsol Wave Solder (Pb-Free) 265 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
Table 4. 10EP DC CHARACTERISTICS, PECL
(VCC = 3.3 V, VEE = 0 V (Note 1))
−40
°
C 25
°
C 85
°
C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
IEE Power Supply Current 20 24 31 20 24 31 20 24 32 mA VOH Output HIGH Voltage (Note 2) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 2) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single-Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single-Ended) 1365 1690 1430 1755 1490 1815 mV VBB Output Voltage Reference 1790 1890 1990 1855 1955 2055 1915 2015 2115 mV VIHCMR Input HIGH Voltage Common Mode 2.0 3.3 2.0 3.3 2.0 3.3 V Range (Differential Configuration) (Note 3) IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current mA D 0.5 0.5 0.5 D −150 −150 −150 NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal.
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MC10EP16, MC100EP16 Table 3. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Unit
VCC PECL Mode Power Supply VEE = 0 V 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage VEE = 0 V VI ≤ VCC 6 V NECL Mode Input Voltage VCC = 0 V VI ≥ VEE −6 Iout Output Current Continuous 50 mA Surge 100 IBB VBB Sink/Source ±0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm SOIC−8 NB 190 °C/W 500 lfpm SOIC−8 NB 130 qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm TSSOP−8 185 °C/W 500 lfpm TSSOP−8 140 qJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm DFN8 129 °C/W 500 lfpm DFN8 84 qJC Thermal Resistance (Junction-to-Case) (Note 2) DFN8 35 to 40 °C/W Tsol Wave Solder (Pb-Free) 265 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
Table 4. 10EP DC CHARACTERISTICS, PECL
(VCC = 3.3 V, VEE = 0 V (Note 1))
−40
°
C 25
°
C 85
°
C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit
IEE Power Supply Current 20 24 31 20 24 31 20 24 32 mA VOH Output HIGH Voltage (Note 2) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 2) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single-Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single-Ended) 1365 1690 1430 1755 1490 1815 mV VBB Output Voltage Reference 1790 1890 1990 1855 1955 2055 1915 2015 2115 mV VIHCMR Input HIGH Voltage Common Mode 2.0 3.3 2.0 3.3 2.0 3.3 V Range (Differential Configuration) (Note 3) IIH Input HIGH Current 150 150 150 mA IIL Input LOW Current mA D 0.5 0.5 0.5 D −150 −150 −150 NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. 3. VIHCMR min varies 1:1 with VEE, VIHCMR max varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal.
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