Datasheet APT40M35JVR (APT) - 2

DYNAMIC CHARACTERISTICS APT40M35JVR Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Ciss Input Capacitance V = 0V 16800 20160 GS Coss Output Capacitance V = 25V 2400 3360 DS pF C f = 1 MHz rss Reverse Transfer Capacitance 1070 1605 Qg Total Gate Charge 3 V = 10V 710 1065 GS Q V = 0.5 V gs Gate-Source Charge DD DSS 80 120 nC Q I = 0.5 I @ 25°C gd Gate-Drain ("Miller ") Charge D D[Cont.] 340 510 td(on) Turn-on Delay Time V = 15V 20 40 GS t Rise Time V = 0.5 V r DD DSS 30 60 ns t I = I @ 25°C d(off) Turn-off Delay Time D D[Cont.] 75 115 t R = 0.6Ω f Fall Time G 14 28
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IS Continuous Source Current (Body Diode) 93 Amps ISM Pulsed Source Current 1 (Body Diode) 372 V Diode Forward Voltage 2 (V = 0V, I = -I ) SD GS S D[Cont.] 1.3 Volts t Reverse Recovery Time (I = -I , dl /dt = 100A/µs) rr S D[Cont.] S 700 ns Q Reverse Recovery Charge (I = -I , dl /dt = 100A/µs) rr S D[Cont.] S 19 µC
THERMAL / PACKAGE CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT
Rθ Junction to Case 0.18 JC °C/W Rθ Junction to Ambient 40 JA V RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) 2500 Isolation Volts Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 13 lb•in 1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471 temperature. 4 Starting Tj = +25°C, L = 832µH, RG = 25Ω, Peak IL = 93A 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2 0.1 D=0.5 °C/W) 0.05 0.2 0.1 0.05 0.01 Note: 0.02 0.005 DM t1 0.01 P , THERMAL IMPEDANCE ( t SINGLE PULSE 2 JCθ t Duty Factor D = 1/ Z t 0.001 2 Peak TJ = PDM x ZθJC + TC 0.0005 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) 050-5586 Rev A
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION