Datasheet BAR42, BAR43 (STMicroelectronics) - 4

Characteristics BAR42, BAR43 Figure 5. Junction capacitance versus reverse Figure 6. Relative variation of thermal voltage applied (typical values) impedance junction to ambient versus pulse duration C(pF) Zth(j-a)/Rth(j-a)
10 1.00 F=1MHz δ = 0.5 T =25°C j T δ = 0.2 5 δ = 0.1 0.10 δ=tp/T tp 2 Single pulse
VR(V) epoxy FR4 with recommended pad layout, e = 35 µm t (s) Cu p
1 0.01 1 2 5 10 20 30 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
Figure 7. Thermal resistance junction to ambient versus copper surface under each lead Rth(j-a)(°C/W)
350
Epoxy printed circuit board FR4, copper thickness: 35 µm
P=0.25W 300 250 200
S(CU)(mm²)
150 0 5 10 15 20 25 30 35 40 45 50 4/7 DocID3288 Rev 5 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameter Table 4. Static electrical characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Reverse leakage current versus junction temperature Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 7. Thermal resistance junction to ambient versus copper surface under each lead 2 Package information Table 6. SOT23-3L dimensions Figure 8. Footprint (dimensions in mm) 3 Ordering information Table 7. Ordering information 4 Revision history Table 8. Document revision history