Datasheet MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | 6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak) |
| 页数 / 页 | 12 / 3 — MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M. ELECTRICAL … |
| 文件格式/大小 | PDF / 276 Kb |
| 文件语言 | 英语 |
MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. Device. Min. Typ. Max
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MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M ELECTRICAL CHARACTERISTICS
(TA = 25°C, unless otherwise noted)
Symbol Parameter Test Conditions Device Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS EMITTER
VF Input Forward Voltage IF = 30 mA All − 1.3 1.5 V IR Reverse Leakage Current VR = 6 V All − 0.005 100 mA
DETECTOR
IDRM1 Peak Blocking Current, VDRM = 600 V, IF = 0 (Note 1) MOC306XM − 10 500 nA Either Direction MOC316XM − 10 100 dv/dt Critical Rate of Rise of IF = 0 (Note 2) MOC306XM 600 1500 − V/ms Off−State Voltage MOC316XM 1000 − −
TRANSFER CHARACTERISTICS
IFT LED Trigger Current Main Terminal Voltage = 3 V MOC3061M − − 15 mA (Rated IFT) (Note 3) MOC3062M − − 10 MOC3162M MOC3063M − − 5 MOC3163M VTM Peak On−State Voltage, ITM = 100 mA peak, IF = rated IFT All − 1.8 3.0 V Either Direction IH Holding Current, Either All − 500 − mA Direction
ZERO CROSSING CHARACTERISTICS
VINH Inhibit Voltage (MT1−MT2 IF = rated IFT MOC3061M − 12 20 V Voltage Above Which Device MOC3062M will not Trigger) MOC3063M MOC3162M − 12 15 MOC3163M IDRM2 Leakage in Inhibited State IF = rated IFT, VDRM = 600 V, All − − 2 mA off−state
ISOLATION CHARACTERISTICS
VISO Isolation Voltage (Note 4) f = 60 Hz, t = 1 Minute 4170 − − VACRMS RISO Isolation Resistance VI−O = 500 VDC − 1011 − W CISO Isolation Capacitance V = 0 V, f = 1 MHz − 0.2 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Test voltage must be applied within dv/dt rating. 2. This is static dv/dt. Commutating dv/dt is a function of the load−driving thyristor(s) only. 3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (15 mA for MOC3061M, 10 mA for MOC3062M and MOC3162M, 5 mA for MOC3063M and MOC3163M) and absolute maximum IF (60 mA). 4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common.
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MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M ELECTRICAL CHARACTERISTICS
(TA = 25°C, unless otherwise noted)
Symbol Parameter Test Conditions Device Min Typ Max Unit INDIVIDUAL COMPONENT CHARACTERISTICS EMITTER
VF Input Forward Voltage IF = 30 mA All − 1.3 1.5 V IR Reverse Leakage Current VR = 6 V All − 0.005 100 mA
DETECTOR
IDRM1 Peak Blocking Current, VDRM = 600 V, IF = 0 (Note 1) MOC306XM − 10 500 nA Either Direction MOC316XM − 10 100 dv/dt Critical Rate of Rise of IF = 0 (Note 2) MOC306XM 600 1500 − V/ms Off−State Voltage MOC316XM 1000 − −
TRANSFER CHARACTERISTICS
IFT LED Trigger Current Main Terminal Voltage = 3 V MOC3061M − − 15 mA (Rated IFT) (Note 3) MOC3062M − − 10 MOC3162M MOC3063M − − 5 MOC3163M VTM Peak On−State Voltage, ITM = 100 mA peak, IF = rated IFT All − 1.8 3.0 V Either Direction IH Holding Current, Either All − 500 − mA Direction
ZERO CROSSING CHARACTERISTICS
VINH Inhibit Voltage (MT1−MT2 IF = rated IFT MOC3061M − 12 20 V Voltage Above Which Device MOC3062M will not Trigger) MOC3063M MOC3162M − 12 15 MOC3163M IDRM2 Leakage in Inhibited State IF = rated IFT, VDRM = 600 V, All − − 2 mA off−state
ISOLATION CHARACTERISTICS
VISO Isolation Voltage (Note 4) f = 60 Hz, t = 1 Minute 4170 − − VACRMS RISO Isolation Resistance VI−O = 500 VDC − 1011 − W CISO Isolation Capacitance V = 0 V, f = 1 MHz − 0.2 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Test voltage must be applied within dv/dt rating. 2. This is static dv/dt. Commutating dv/dt is a function of the load−driving thyristor(s) only. 3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (15 mA for MOC3061M, 10 mA for MOC3062M and MOC3162M, 5 mA for MOC3063M and MOC3163M) and absolute maximum IF (60 mA). 4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common.
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