Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 2
| 制造商 | NXP |
| 描述 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| 页数 / 页 | 16 / 2 — Table 3. ESD Protection Characteristics. Test Methodology. Class. Table … |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
Table 3. ESD Protection Characteristics. Test Methodology. Class. Table 4. Electrical Characteristics. Characteristic. Symbol. Min
该数据表的模型线
MRF8P29300H
MRF8P29300HS
文件文字版本
Table 3. ESD Protection Characteristics Test Methodology Class
Human Body Model (per JESD22- A114) 2 (Minimum) Machine Model (per EIA/JESD22- A115) A (Minimum) Charge Device Model (per JESD22- C101) IV (Minimum)
Table 4. Electrical Characteristics
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Off Characteristics (1)
Gate- Source Leakage Current IGSS — — 1 μAdc (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 1 μAdc (VDS = 30 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 10 μAdc (VDS = 65 Vdc, VGS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
VGS(th) 1.0 1.9 2.5 Vdc (VDS = 10 Vdc, ID = 345 μAdc) Gate Quiescent Voltage
(2)
VGS(Q) 1.5 2.3 3.0 Vdc (VDD = 30 Vdc, ID = 100 mAdc, Measured in Functional Test) Drain- Source On- Voltage
(1)
VDS(on) 0.1 0.18 0.3 Vdc (VGS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance Crss — 2.53 — pF (VDS = 30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance Coss — 470 — pF (VDS = 30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance Ciss — 264 — pF (VDS = 30 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Functional Tests (2)
(In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), f = 2900 MHz, 100 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 12.0 13.3 15.0 dB Drain Efficiency ηD 47.0 50.5 — % Input Return Loss IRL — - 17 - 9 dB
Typical Pulsed RF Performance
(In Freescale 2″x3″ Compact Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), 300 μsec Pulse Width, 10% Duty Cycle
Gps
η
D IRL Frequency (dB) (%) (dB)
2700 MHz 13.9 49.3 - 11 2800 MHz 14.0 49.8 - 18 2900 MHz 13.0 49.6 - 15 1. Each side of device measured separately. 2. Measurement made with device in push- pull configuration.
MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 2 Freescale Semiconductor
Human Body Model (per JESD22- A114) 2 (Minimum) Machine Model (per EIA/JESD22- A115) A (Minimum) Charge Device Model (per JESD22- C101) IV (Minimum)
Table 4. Electrical Characteristics
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Off Characteristics (1)
Gate- Source Leakage Current IGSS — — 1 μAdc (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 1 μAdc (VDS = 30 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 10 μAdc (VDS = 65 Vdc, VGS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
VGS(th) 1.0 1.9 2.5 Vdc (VDS = 10 Vdc, ID = 345 μAdc) Gate Quiescent Voltage
(2)
VGS(Q) 1.5 2.3 3.0 Vdc (VDD = 30 Vdc, ID = 100 mAdc, Measured in Functional Test) Drain- Source On- Voltage
(1)
VDS(on) 0.1 0.18 0.3 Vdc (VGS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance Crss — 2.53 — pF (VDS = 30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance Coss — 470 — pF (VDS = 30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance Ciss — 264 — pF (VDS = 30 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Functional Tests (2)
(In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), f = 2900 MHz, 100 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 12.0 13.3 15.0 dB Drain Efficiency ηD 47.0 50.5 — % Input Return Loss IRL — - 17 - 9 dB
Typical Pulsed RF Performance
(In Freescale 2″x3″ Compact Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), 300 μsec Pulse Width, 10% Duty Cycle
Gps
η
D IRL Frequency (dB) (%) (dB)
2700 MHz 13.9 49.3 - 11 2800 MHz 14.0 49.8 - 18 2900 MHz 13.0 49.6 - 15 1. Each side of device measured separately. 2. Measurement made with device in push- pull configuration.
MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 2 Freescale Semiconductor