Datasheet BCV62 (Nexperia) - 7
| 制造商 | Nexperia |
| 描述 | PNP General-Purpose Double Transistors |
| 页数 / 页 | 14 / 7 — Nexperia. BCV62. PNP general-purpose double transistors. Fig 9. BCV62C: … |
| 文件格式/大小 | PDF / 816 Kb |
| 文件语言 | 英语 |
Nexperia. BCV62. PNP general-purpose double transistors. Fig 9. BCV62C: DC current gain as a function of
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Nexperia BCV62 PNP general-purpose double transistors
mgt719 mgt720 1000 −1200 VBE hFE (mV) (1) −1000 800 (1) −800 600 (2) (2) −600 400 −400 (3) (3) 200 −200 0 0 −10−2 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −5 V VCE = −5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 9. BCV62C: DC current gain as a function of Fig 10. BCV62C: Base-emitter voltage as a function of collector current; typical values collector current; typical values
mgt721 − mgt722 104 −1200 VBEsat V (mV) CEsat (mV) −1000 (1) −103 −800 (2) −600 (3) −102 −400 (1) −200 (3) (2) −10 0 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 11. BCV62C: Collector-emitter saturation voltage Fig 12. BCV62C: Base-emitter saturation voltage as a as a function of collector current; typical function of collector current; typical values values
BCV62 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 4 — 26 July 2010 7 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
mgt719 mgt720 1000 −1200 VBE hFE (mV) (1) −1000 800 (1) −800 600 (2) (2) −600 400 −400 (3) (3) 200 −200 0 0 −10−2 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −5 V VCE = −5 V (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 9. BCV62C: DC current gain as a function of Fig 10. BCV62C: Base-emitter voltage as a function of collector current; typical values collector current; typical values
mgt721 − mgt722 104 −1200 VBEsat V (mV) CEsat (mV) −1000 (1) −103 −800 (2) −600 (3) −102 −400 (1) −200 (3) (2) −10 0 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C
Fig 11. BCV62C: Collector-emitter saturation voltage Fig 12. BCV62C: Base-emitter saturation voltage as a as a function of collector current; typical function of collector current; typical values values
BCV62 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 4 — 26 July 2010 7 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents