Datasheet Si2334DS (Vishay) - 2
| 制造商 | Vishay |
| 描述 | N-Channel 30 V (D-S) MOSFET |
| 页数 / 页 | 9 / 2 — Si2334DS. SPECIFICATIONS. Parameter. Symbol. Test Conditions. Min. Typ. … |
| 文件格式/大小 | PDF / 190 Kb |
| 文件语言 | 英语 |
Si2334DS. SPECIFICATIONS. Parameter. Symbol. Test Conditions. Min. Typ. Max. Unit. Static. Dynamicb. Drain-Source Body Diode Characteristics
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Si2334DS
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient VDS/TJ 2.8 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 0.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.4 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta I D(on) VDS 5 V, VGS = 10 V 10 A V GS 4.5 V, ID = 4.2 A 0.035 0.044 Drain-Source On-State Resistancea RDS(on) V GS 2.5 V, ID = 4.0 A 0.040 0.050 Forward Transconductancea gfs VDS = 15 V, ID = 4.2 A 27 S
Dynamicb
Input Capacitance Ciss 634 Output Capacitance C V oss DS = 15 V, VGS = 0 V, f = 1 MHz 65 pF Reverse Transfer Capacitance Crss 30 VDS = 15 V, VGS = 4.5 V, ID = 4.2 A 6.5 10 Total Gate Charge Qg 3.7 6 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 2.5 V, ID = 4.2 A 1.2 Gate-Drain Charge Qgd 0.8 Gate Resistance Rg f = 1 MHz 0.5 2.7 5.4 Turn-On Delay Time td(on) 6 12 Rise Time tr VDD = 15 V, RL = 4.4 10 20 I Turn-Off Delay Time td(off) D 3.4 A, VGEN = 4.5 V, Rg = 1 16 24 Fall Time tf 8 16 ns Turn-On Delay Time td(on) 4 8 Rise Time tr VDD = 15 V, RL = 4.4 10 20 I Turn-Off Delay Time td(off) D 3.4 A, VGEN = 8 V, Rg = 1 18 27 Fall Time tf 8 16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 1.4 A Pulse Diode Forward Current ISM 10 Body Diode Voltage V SD IS = 3.4 A, VGS 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr 11 20 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC IF = 3.4 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta 7 ns Reverse Recovery Rise Time tb 4 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66802 2 S10-1533-Rev. A, 19-Jul-10
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient VDS/TJ 2.8 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 0.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.4 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta I D(on) VDS 5 V, VGS = 10 V 10 A V GS 4.5 V, ID = 4.2 A 0.035 0.044 Drain-Source On-State Resistancea RDS(on) V GS 2.5 V, ID = 4.0 A 0.040 0.050 Forward Transconductancea gfs VDS = 15 V, ID = 4.2 A 27 S
Dynamicb
Input Capacitance Ciss 634 Output Capacitance C V oss DS = 15 V, VGS = 0 V, f = 1 MHz 65 pF Reverse Transfer Capacitance Crss 30 VDS = 15 V, VGS = 4.5 V, ID = 4.2 A 6.5 10 Total Gate Charge Qg 3.7 6 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 2.5 V, ID = 4.2 A 1.2 Gate-Drain Charge Qgd 0.8 Gate Resistance Rg f = 1 MHz 0.5 2.7 5.4 Turn-On Delay Time td(on) 6 12 Rise Time tr VDD = 15 V, RL = 4.4 10 20 I Turn-Off Delay Time td(off) D 3.4 A, VGEN = 4.5 V, Rg = 1 16 24 Fall Time tf 8 16 ns Turn-On Delay Time td(on) 4 8 Rise Time tr VDD = 15 V, RL = 4.4 10 20 I Turn-Off Delay Time td(off) D 3.4 A, VGEN = 8 V, Rg = 1 18 27 Fall Time tf 8 16
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 1.4 A Pulse Diode Forward Current ISM 10 Body Diode Voltage V SD IS = 3.4 A, VGS 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr 11 20 ns Body Diode Reverse Recovery Charge Qrr 5 10 nC IF = 3.4 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta 7 ns Reverse Recovery Rise Time tb 4 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66802 2 S10-1533-Rev. A, 19-Jul-10