Datasheet MBRA140, NRVBA140, NRVBA140N, SBRA140N, SBRA401N (ON Semiconductor) - 2

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MBRA140, NRVBA140, NRVBA140N, SBRA140N, SBRA401N MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IO A (At Rated VR, TC = 95°C) 1.0 Peak Repetitive Forward Current IFRM A (At Rated VR, Square Wave, 20 kHz, TC = 100°C) 2.0 Non−Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 30 Storage Temperature Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +125 °C Voltage Rate of Change dv/dt V/ms (Rated VR, TJ = 25°C) 10,000 ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1) RqJL 35 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 86 1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit
VF
TJ = 25
°
C TJ = 100
°
C
V Maximum Instantaneous Forward Voltage (Note 2) (IF = 1.0 A) 0.55 0.505 see Figure 2 for other Values (IF = 2.0 A) 0.71 0.74 IR
TJ = 25
°
C TJ = 100
°
C
mA Maximum Instantaneous Reverse Current (VR = 40 V) 0.5 10 see Figure 4 for other Values (VR = 20 V) 0.1 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
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