Datasheet EPC2361 (Efficient Power Conversion) - 5
制造商 | Efficient Power Conversion |
描述 | Enhancement Mode Power Transistor |
页数 / 页 | 10 / 5 — eGaN® FET DATASHEET. TYPICAL THERMAL CONCEPT |
文件格式/大小 | PDF / 1.9 Mb |
文件语言 | 英语 |
eGaN® FET DATASHEET. TYPICAL THERMAL CONCEPT
该数据表的模型线
文件文字版本
eGaN® FET DATASHEET
EPC2361
TYPICAL THERMAL CONCEPT
The EPC2361 can take advantage of dual sided cooling to maximize its heat dissipation capabilities in high power density designs.
Note that the top of EPC FETs are connected to source potential, so for half-bridge topologies the Thermal Interface Material (TIM) needs to provide electrical isolation to the heatsink.
Recommended best practice thermal solutions are covered in detail in
How2AppNote012 - How to Get More Power Out of an eGaN Converter.pdf
. M2 screws (x4) Heatsink SMD spacer (4x) TIM PCB assembly eGaN FETs Figure 13: Exploded view of heatsink assembly using screws Heatsink Thermal pad
Heat Paths FET 1 FET 2 PCB
Figure 14: A cross-section image of dual sided thermal solution
Note: Connecting the heatsink to ground is recommended and can significantly improve radiated EMI
The thermal design can be optimized by using the
GaN FET Thermal Calculator
on EPC’s website. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2024 | For more information:
info@epc-co.com
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