Datasheet FDS6675 (Fairchild) - 5

Typical Electrical Characteristics
(continued) 6000 10 I D = -11A V = -5V 4000 DS -10V C iss 8 -15V 2000 6 C oss 1000 4 500 C rss CAPACITANCE (pF) 2 GS 200 f = 1 MHz - V , GATE-SOURCE VOLTAGE (V) V GS = 0 V 0 0 12 24 36 48 60 100 0.1 0.2 0.5 1 2 5 10 20 30 Q , GATE CHARGE (nC) g - V , DRAIN TO SOURCE VOLTAGE (V) DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100 50 100us SINGLE PULSE 30 40 R =125°C/W θJA RDS(ON) LIMIT 1ms 10 T = 25°C 10ms A 3 1s 30 100ms 0.5 DC 20 V 10s POWER (W) GS = -10V SINGLE PULSE D - I , DRAIN CURRENT (A) R = 125° C/W 10 0.05 θJA T = 2 5 ° C A 0.01 0 0.05 0.1 0.3 1 3 10 30 50 0.001 0.01 0.1 1 10 100 300 - V , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) DS
Figure 9. Maximum Safe Operating Area
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Figure 10. Single Pulse Maximum Power Dissipation.
1 0.5 D = 0.5 R (t) = r(t) * R 0.2 0.2 θJA θJA R = 125°C/W θJA 0.1 0.1 0.05 0.05 P(pk) 0.02 0.02 0.01 t 1 0.01 t Single Pulse 2 0.005 T - T = P * R (t) J A θJA r(t), NORMALIZED EFFECTIVE Duty Cycle, D = t /t 1 2 0.002 TRANSIENT THERMAL RESISTANCE 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t , TIME (sec) 1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4