Datasheet IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 (Vishay) - 5

制造商Vishay
描述Power MOSFET
页数 / 页13 / 5 — IRFR9310, IRFU9310, SiHFR9310, SiHFU9310. Fig. 10a - Switching Time Test …
文件格式/大小PDF / 266 Kb
文件语言英语

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310. Fig. 10a - Switching Time Test Circuit

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Fig 10a - Switching Time Test Circuit

该数据表的模型线

文件文字版本

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com Vishay Siliconix RD 2.0 VDS VGS D.U.T. R 1.6 g -+V ) DD t (A - 10 V n 1.2 Pulse width ≤ 1 µs rre u Duty factor ≤ 0.1 % C in ra
Fig. 10a - Switching Time Test Circuit
0.8 D-I , D 0.4 t t t t d(on) r d(off) f VGS 10 % 0.025 50 75 100 125 150 T , Case Temperature ( C ° ) C 90 % VDS
Fig. 8 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
10 C J ) th D = 0.50 (Z 1 0.20 0.10 0.05 Response PDM al 0.02 0.1 SINGLE PULSE m 0.01 (THERMAL RESPONSE) t1 t2 Ther Notes: 1. Duty factor D = t / t 1 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S21-0373-Rev. E, 19-Apr-2021
5
Document Number: 91284 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000